型号：PESD24VS1ULD；Package：SOD882D；Unidirectional ESD protection diode

1. General description Unidirectional ElectroStatic Discharge (ESD) protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device is housed in a SOD882D leadless ultra small Surface-Mounted Device (SMD) plastic package with visible and solde

文件：264.73 Kbytes 页数：11 Pages

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型号：PESD24VS1ULD-Q；Package：DFN1006D-2；Unidirectional ESD protection diode

1. General description Unidirectional ElectroStatic Discharge (ESD) protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device is housed in a SOD882D leadless ultra small Surface-Mounted Device (SMD) plastic package with visible and solde

文件：282.77 Kbytes 页数：12 Pages

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型号：PMEG2005BELD-Q；Package：DFN1006D-2；20 V, 0.5 A low VF MEGA Schottky barrier rectifier

1. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a leadless ultra small SOD882D (DFN1006D-2) Surface-Mounted Device (SMD) plastic package with visible and solderable side p

文件：243.58 Kbytes 页数：12 Pages

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型号：PMEG4005EPK；Package：DFN1608D-2；40 V, 0.5 A low VF MEGA Schottky barrier rectifier

1. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a leadless ultra small SOD1608 (DFN1608D-2) Surface-Mounted Device (SMD) plastic package with visible and solderable side p

文件：246.56 Kbytes 页数：12 Pages

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型号：BC847AQA；Package：DFN1010D-3；45 V, 100 mA NPN general-purpose transistors

Features and benefits  General-purpose transistors  Three current gain selections  Low package height of 0.37 mm  Suitable for Automatic Optical Inspection (AOI) of solder joint  AEC-Q101 qualified

文件：1.28054 Mbytes 页数：15 Pages

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型号：BC847BQA；Package：DFN1010D-3；45 V, 100 mA NPN general-purpose transistors

Features and benefits  General-purpose transistors  Three current gain selections  Low package height of 0.37 mm  Suitable for Automatic Optical Inspection (AOI) of solder joint  AEC-Q101 qualified

文件：1.28054 Mbytes 页数：15 Pages

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型号：PBSS5130QA；Package：DFN1010D-3；30 V, 1 A PNP low VCEsat (BISS) transistor

1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN complement: PBSS4130QA. 2. Features and benefits • Very low collector-

文件：726.66 Kbytes 页数：17 Pages

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型号：PDTA123EMB；Package：SOT883B；PNP resistor-equipped transistor; R1 = 2.2 k廓, R2 = 2.2 k廓

General description PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC123EMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■

文件：836.02 Kbytes 页数：13 Pages

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型号：PDTA124EMB；Package：DFN1006B-3；PNP resistor-equipped transistor; R1 = 22 k廓, R2 = 22 k廓

General description PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC124EMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■

文件：969.13 Kbytes 页数：12 Pages

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型号：PDTA143EMB；Package：DFN1006B-3；PNP resistor-equipped transistor; R1 = 4.7 k廓, R2 = 4.7 k廓

General description PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC143EMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■

文件：839.15 Kbytes 页数：12 Pages

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