丝印：00100111；Package：DFN1006B-3；PNP resistor-equipped transistor; R1 = 4.7 k廓, R2 = 4.7 k廓

General description PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC143EMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■

文件：839.15 Kbytes 页数：12 Pages

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5.08mm (.200) Pitch KK짰 Crimp Terminal Housing, 10 Circuits

文件：152.64 Kbytes 页数：3 Pages

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5.08mm (.200) Pitch KK짰 Crimp Terminal Housing, 11 Circuits

文件：152.55 Kbytes 页数：3 Pages

MOLEX1

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5.08mm (.200) Pitch KK짰 Crimp Terminal Housing, 12 Circuits

文件：152.64 Kbytes 页数：3 Pages

MOLEX1

莫仕