NX138AKH

Marking：0001；Package：SOT8001；60 V, N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaleadless,ultrasmallDFN0606-3 (SOT8001)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •Logic-levelcompatible •Veryfastswitching •TrenchMOSFET

NX138BKH

Marking：0001；Package：SOT8001；60 V, N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaleadlessultrasmallDFN0606-3 (SOT8001)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •Lowthresholdvoltage •Veryfastswitching •TrenchMOSFETte

NX5008NBKH

Marking：0001；Package：SOT8001；50 V, N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaleadlessultrasmallDFN0606-3 (SOT8001)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •Lowthresholdvoltage •Veryfastswitching •TrenchMOSFETte

NX7002BKH

Marking：0001；Package：SOT8001；60 V, N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaleadlessultrasmallDFN0606-3 (SOT8001)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •Logic-levelcompatible •Veryfastswitching •TrenchMOSFETt

PESD5V0H1BSN

Marking：0001；Package：SOD992B；Extremely low capacitance bidirectional ESD protection diode

1.Generaldescription ExtremelylowcapacitancebidirectionalElectroStaticDischarge(ESD)protectiondiode,partofthe TrEOSprotectionfamily.ThisdeviceishousedinaDSN0402B-2(SOD992B)leadlessultrasmall Surface-MountedDevice(SMD)packagedesignedtoprotectonesignallinefrom

PESD5V0L2UMB

Marking：0001；Package：SOT883B；Low capacitance unidirectional double ESD protection array

1.1Generaldescription LowcapacitanceunidirectionaldoubleElectroStaticDischarge(ESD)protectionarray designedtoprotectuptotwosignallinesfromthedamagecausedbyESDandother transients.ThedeviceishousedinaleadlessultrasmallSOT883BSurface-Mounted Device(SMD)plasti

PESD5V0L2UMB-Q

Marking：0001；Package：SOT883B；Low capacitance unidirectional double ESD protection array

1.Generaldescription LowcapacitanceunidirectionaldoubleElectroStaticDischarge(ESD)protectionarray,designedto protectuptotwosignallinesfromthedamagecausedbyESDandothertransients.Thedeviceis housedinaleadlessultrasmallSOT883BSurface-MountedDevice(SMD)plastic

PESD5V0U1BLD

Marking：0001；Package：SOD882D；Ultra low capacitance bidirectional ESD protection diode

1.Generaldescription UltralowcapacitancebidirectionalElectroStaticDischarge(ESD)protectiondiodedesignedto protectonesignallinefromthedamagecausedbyESDandothertransients.Thedeviceishoused inaSOD882DleadlessultrasmallSurface-MountedDevice(SMD)plasticpackagew

PESD5V0U1BLD-Q

Marking：0001；Package：DFN1006D-2；Ultra low capacitance bidirectional ESD protection diode

1.Generaldescription UltralowcapacitancebidirectionalElectroStaticDischarge(ESD)protectiondiodedesignedto protectonesignallinefromthedamagecausedbyESDandothertransients.Thedeviceishoused inaSOD882DleadlessultrasmallSurface-MountedDevice(SMD)plasticpackagew

PESD5V0U2BMB-Q

Marking：0001；Package：DFN1006B-3；Ultra low capacitance bidirectional double ESD protection array

1.Generaldescription UltralowcapacitancebidirectionaldoubleElectroStaticDischarge(ESD)protectionarraydesigned toprotectuptotwosignallinesfromthedamagecausedbyESDandothertransients.Thedevice ishousedinaleadlessultrasmallSOT883B(DFN1006B-3)Surface-MountedDev