型号：NX138AKH；Package：SOT8001；60 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless, ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET

文件：286.38 Kbytes 页数：14 Pages

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型号：NX138BKH；Package：SOT8001；60 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Very fast switching • Trench MOSFET te

文件：286.09 Kbytes 页数：14 Pages

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型号：NX5008NBKH；Package：SOT8001；50 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Very fast switching • Trench MOSFET te

文件：286.24 Kbytes 页数：14 Pages

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型号：NX7002BKH；Package：SOT8001；60 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET t

文件：278.34 Kbytes 页数：14 Pages

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型号：PESD5V0H1BSN；Package：SOD992B；Extremely low capacitance bidirectional ESD protection diode

1. General description Extremely low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode, part of the TrEOS protection family. This device is housed in a DSN0402B-2 (SOD992B) leadless ultra small Surface-Mounted Device (SMD) package designed to protect one signal line from

文件：964.16 Kbytes 页数：14 Pages

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型号：PESD5V0L2UMB；Package：SOT883B；Low capacitance unidirectional double ESD protection array

1.1 General description Low capacitance unidirectional double ElectroStatic Discharge (ESD) protection array designed to protect up to two signal lines from the damage caused by ESD and other transients. The device is housed in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plasti

文件：1.14532 Mbytes 页数：13 Pages

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型号：PESD5V0L2UMB-Q；Package：SOT883B；Low capacitance unidirectional double ESD protection array

1. General description Low capacitance unidirectional double ElectroStatic Discharge (ESD) protection array, designed to protect up to two signal lines from the damage caused by ESD and other transients. The device is housed in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic

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型号：PESD5V0U1BLD；Package：SOD882D；Ultra low capacitance bidirectional ESD protection diode

1. General description Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device is housed in a SOD882D leadless ultra small Surface-Mounted Device (SMD) plastic package w

文件：212.36 Kbytes 页数：11 Pages

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型号：PESD5V0U1BLD-Q；Package：DFN1006D-2；Ultra low capacitance bidirectional ESD protection diode

1. General description Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device is housed in a SOD882D leadless ultra small Surface-Mounted Device (SMD) plastic package w

文件：216.72 Kbytes 页数：11 Pages

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型号：PESD5V0U2BMB-Q；Package：DFN1006B-3；Ultra low capacitance bidirectional double ESD protection array

1. General description Ultra low capacitance bidirectional double ElectroStatic Discharge (ESD) protection array designed to protect up to two signal lines from the damage caused by ESD and other transients. The device is housed in a leadless ultra small SOT883B (DFN1006B-3) Surface-Mounted Dev

文件：224.49 Kbytes 页数：11 Pages

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