丝印：000101；Package：DFN1010B-6；60 V, dual N-channel Trench MOSFET

文件：743.47 Kbytes 页数：17 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：00010111；Package：DFN1006B-3；NPN resistor-equipped transistor; R1 = 2.2 k廓, R2 = 47 k廓

General description NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA123JMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■

文件：840.61 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：00010101；Package：DFN1006B-3；NPN resistor-equipped transistor; R1 = 4.7 k廓, R2 = 10 k廓

General description NPN Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA143XMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■ Reduces pick

文件：962.81 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：00010110；Package：DFN1006B-3；NPN resistor-equipped transistor; R1 = 4.7 k廓, R2 = 47 k廓

General description NPN Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA143ZMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■ Reduces pick

文件：961.2 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：00010111；Package：SOT8001；30 V, N-channel Trench MOSFET

description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features • Low threshold voltage • Very fast switching • Trench MOSFET technology • ElectroStatic

文件：273.74 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司