丝印：00010110；Package：DFN1006B-3；NPN resistor-equipped transistor; R1 = 4.7 k廓, R2 = 47 k廓

General description NPN Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA143ZMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■ Reduces pick

文件：961.2 Kbytes 页数：12 Pages

NEXPERIA

安世

NPN resistor-equipped transistor; R1 = 4.7 k廓, R2 = 47 k廓

文件：720.64 Kbytes 页数：11 Pages

PHI

PHI

NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47 kΩ

NPN Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA143ZMB. • 100 mA output current capability\n• Reduces component count\n• Built-in bias resistors\n• Reduces pick and place costs\n• Simplifies circuit design\n• AEC-Q101 qualified\n• Leadless ultra small SMD plastic package\n• Low package height of 0.37 mm;

Nexperia

安世

Package：3-XFDFN；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS NPN 50V DFN1006B-3

Nexperia USA Inc.