型号：PDTA114EMB；Package：SOT883B；PNP resistor-equipped transistor; R1 = 10 k廓, R2 = 10 k廓

General description PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC114EMB Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias transistors ■

文件：845.94 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

型号：PMH850UPE；Package：SOT8001；30 V, P-channel Trench MOSFET

description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits • Low threshold voltage • Very fast switching • Trench MOSFET technology •

文件：277.75 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

型号：00011001；Miniature Fuse, 5 x 20 mm, Quick-Acting F, H, 250 VAC

文件：338.2 Kbytes 页数：2 Pages

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