丝印：000110；Package：DFN1010D-3；Protection against high surge currents in ultra small DFN1010D-3 package

文件：754.54 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：00011001；Package：SOT883B；PNP resistor-equipped transistor; R1 = 10 k廓, R2 = 10 k廓

General description PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC114EMB Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias transistors ■

文件：845.94 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：00011000；Package：DFN1006B-3；PNP resistor-equipped transistor; R1 = 22 k廓, R2 = 47 k廓

General description PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC124XMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■

文件：747.39 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：00011001；Package：SOT8001；30 V, P-channel Trench MOSFET

description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits • Low threshold voltage • Very fast switching • Trench MOSFET technology •

文件：277.75 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：00011010；Package：DFN1006B-3；Ultra low capacitance bidirectional double ESD protection array

文件：208.03 Kbytes 页数：10 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

Miniature Fuse, 5 x 20 mm, Quick-Acting F, H, 250 VAC

文件：338.2 Kbytes 页数：2 Pages

SCHURTER

硕特

Miniature Fuse, 6.3 x 32 mm, Quick-Acting F, Sand, 250 VAC

文件：265.98 Kbytes 页数：2 Pages

SCHURTER

硕特