PESD5V0S2BQA

Marking：000110；Package：DFN1010D-3；Protection against high surge currents in ultra small DFN1010D-3 package

PESD5V0S2BQAZ

Package：3-XDFN 裸露焊盘；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：电路保护 TVS - 二极管 描述：TVS DIODE 5VWM 11.5VC DFN1010D-3

Nexperia USA Inc.

PESD5V0S2BT

Lowcapacitancebi-directionaldoubleESDprotectiondiodeinSOT23package

Generaldescription Lowcapacitancebi-directionaldoubleESDprotectiondiodeinthesmallSOT23plasticpackagedesignedtoprotect2datalinesfromthedamagecausedbyElectroStaticDischarge(ESD)andothertransients. Features ■Bi-directionalESDprotectionof2lines ■Low

PESD5V0S2BT

LowcapacitancebidirectionaldoubleESDprotectiondiode

1.Generaldescription LowcapacitancebidirectionaldoubleElectroStaticDischarge(ESD)protectiondiodeinasmall SOT23(TO-236AB)Surface-MountedDevice(SMD)plasticpackagedesignedtoprotecttwodata linesfromthedamagecausedbyESDandothertransients. 2.Featuresandbenefits •

PESD5V0S2BT

300Wpeakpulsepower(tp=8/20μs)

Features 300Wpeakpulsepower(tp=8/20μs) Bidirectionalandunidirectionalconfigurations Solid-statesilicon-avalanchetechnology Lowclampingvoltage Lowleakagecurrent Lowcapacitance(Cj=120pFtyp.) Protectiontwodatalines IEC61000-4-2±30kVcontact±30kVair IEC61000-4-4(EF

PESD5V0S2BT-Q

LowcapacitancebidirectionaldoubleESDprotectiondiode

1.Generaldescription LowcapacitancebidirectionaldoubleElectroStaticDischarge(ESD)protectiondiodeinasmall SOT23(TO-236AB)Surface-MountedDevice(SMD)plasticpackage,designedtoprotecttwodata linesfromthedamagecausedbyESDandothertransients. 2.Featuresandbenefits

PESD5V0S2UAT

LowVCEsat(BISS)transistors

PESD5V0S2UAT

DoubleESDprotectiondiodesinSOT23package

DESCRIPTION UnidirectionaldoubleESDprotectiondiodesincommoncathodeconfigurationintheSOT23plasticpackage.DesignedtoprotectuptotwotransmissionordatalinesagainstdamagefromElectroStaticDischarge(ESD)andothertransients. FEATURES •UnidirectionalESDprotectionofupt

PESD5V0S2UAT

DoubleESDprotectiondiodesinSOT23package

FEATURES ·UnidirectionalESDprotectionofuptotwolines ·Common-cathodeconfiguration ·Max.peakpulsepower:Ppp=330Wattp=8/20ms ·Lowclampingvoltage:V(CL)R=20VatIpp=18A ·Ultra-lowreverseleakagecurrent:IRM30kV ·IEC61000-4-2;lev

PESD5V0S2UAT

DoubleESDprotectiondiodeinSOT23package

1.Generaldescription UnidirectionaldoubleESDprotectiondiodeincommoncathodeconfigurationinasmallSOT23 Surface-MountedDevice(SMD)plasticpackage,designedtoprotectuptotwodatalinesagainst damagefromElectroStaticDischarge(ESD)andothertransients. 2.Featuresandbene