丝印：000100；Package：DFN1010B-6；45 V, 200 mA NPN/NPN general-purpose transistor

Features and benefits • Reduces component count • Reduces pick and place costs • AEC-Q101 qualified • Low package height of 0.37 mm

文件：231.18 Kbytes 页数：12 Pages

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安世安世半导体(中国)有限公司

丝印：000100；Package：DFN1010D-3；20 V, P-channel Trench MOSFET

文件：740.73 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：00010000；Package：SOT883B；50 V, 100 mA NPN general-purpose transistors

General description NPN general-purpose transistors in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. Features and benefits ■ Leadless ultra small SMD plastic package ■ Power dissipation comparable to SOT23 ■ Low package height of 0.37 mm ■ AEC

文件：1.10639 Mbytes 页数：10 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：00010000；Package：SOT883B；50 V, 100 mA NPN general-purpose transistors

Features and benefits * Leadless ultra small SMD plastic package * Power dissipation comparable to SOT23 * Low package height of 0.37 mm * AEC-Q101 qualified

文件：1.1054 Mbytes 页数：10 Pages

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安世安世半导体(中国)有限公司

丝印：00010010；Package：DFN0606-3；30 V, N-channel Trench MOSFET

General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits • Low threshold voltage • Very fast switching • Trench MOSFET technol

文件：272.59 Kbytes 页数：14 Pages

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安世安世半导体(中国)有限公司

丝印：00010000；Package：DFN1608D-2；40 V, 2 A low VF MEGA Schottky barrier rectifier

文件：703.7 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司