丝印：0000；Package：SOT883B；20 V, single N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Very fast switching  Low threshold voltage  Trench MOSFE

文件：1.55927 Mbytes 页数：15 Pages

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丝印：N5；Package：DFN1006-3L；N-Channel Enhancement Mode MOSFET

Features | VDS = 20v | + RDS(ON) =300mQ (typ.) @ VGS= 2.5V | + RDS(ON) =250mQ (typ.) @ VGS= 4.5V | + ESD Protected up to 2KV |

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20 V, single N-channel Trench MOSFET

文件：959.15 Kbytes 页数：15 Pages

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丝印：0101；Package：SOT883B；20 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Low threshold voltage • Very fast

文件：717.13 Kbytes 页数：16 Pages

NEXPERIA

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20 V, N-channel Trench MOSFET

文件：230.44 Kbytes 页数：16 Pages

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PMZB290UNE - 20 V, single N-channel Trench MOSFET

20 V, single N-channel Trench MOSFET - N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. ·Very fast switching\n·Low threshold voltage\n·Trench MOSFET technology \n·ESD protection up to 2 kV \n·Ultra thin package profile of 0.37mm;

Nexperia

安世

20 V, N-channel Trench MOSFET

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. • Trench MOSFET technology\n• Low threshold voltage\n• Very fast switching\n• ElectroStatic Discharge (ESD) protection > 2 kV HBM\n• Ultra thin package profile of 0.37 mm;

Nexperia

安世