PBSS5230QA

Marking：000010；Package：DFN1010D-3；30 V, 2 A PNP low VCEsat (BISS) transistor

1.Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadlessultrasmall DFN1010D-3(SOT1215)Surface-MountedDevice(SMD)plasticpackagewithvisible andsolderablesidepads. NPNcomplement:PBSS4230QA. 2.Featuresandbenefits •Verylowcollector-

PMEG2010BELD

Marking：00001001；Package：DFN1006D-2；20 V, 1 A low VF Schottky barrier rectifier

1.Generaldescription PlanarSchottkybarrierrectifierwithanintegratedguardringforstressprotection,encapsulatedin aleadlessultrasmallDFN1006D-2(SOD882D)Surface-MountedDevice(SMD)plasticpackage withvisibleandsolderablesidepads. 2.Featuresandbenefits •Averagefo

PMZB370UNE

Marking：00001000；Package：DFN1006B-3；30 V, single N-channel Trench MOSFET

PMZB380XN

Marking：00001001；Package：DFN1006B-3；30 V, single N-channel Trench MOSFET

PMZB420UN

Marking：00001010；Package：DFN1006B-3；30 V, single N-channel Trench MOSFET