丝印：000010；Package：DFN1010D-3；30 V, 2 A PNP low VCEsat (BISS) transistor

1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN complement: PBSS4230QA. 2. Features and benefits • Very low collector-

文件：727.5 Kbytes 页数：17 Pages

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丝印：00001001；Package：DFN1006D-2；20 V, 1 A low VF Schottky barrier rectifier

1. General description Planar Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a leadless ultra small DFN1006D-2 (SOD882D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 2. Features and benefits • Average fo

文件：243.87 Kbytes 页数：12 Pages

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安世安世半导体(中国)有限公司

丝印：00001000；Package：DFN1006B-3；30 V, single N-channel Trench MOSFET

文件：1.71688 Mbytes 页数：15 Pages

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安世安世半导体(中国)有限公司

丝印：00001001；Package：DFN1006B-3；30 V, single N-channel Trench MOSFET

文件：327.95 Kbytes 页数：14 Pages

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丝印：00001010；Package：DFN1006B-3；30 V, single N-channel Trench MOSFET

文件：1.03672 Mbytes 页数：16 Pages

NEXPERIANexperia B.V. All rights reserved

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