30 V, single N-channel Trench MOSFET

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Nexperia

安世

丝印：00001001；Package：DFN1006B-3；30 V, single N-channel Trench MOSFET

文件：327.95 Kbytes 页数：14 Pages

NEXPERIA

安世

SINGLE—PORT HIGH SFEED MODULAR JAUK, VERTICAL MOUNT, BLACK HOUSING, 8 POSITIONS, 8 FLAT CONTACTS, WITHOUT LED, SHIELDED, WITHOUT FLANGE — RoHS COMPLIANT

文件：207.74 Kbytes 页数：1 Pages

AMPHENOLCS

安费诺

HIGH SPEED, RJ45, MODULAR JACK, 8 POSITION, 8 CONTACTS, SHIELDED WITHOUT LEDs — RoHS COMPLIANT

文件：107.81 Kbytes 页数：1 Pages

AMPHENOLCS

安费诺

High Sensitivity, f 3mm Resin Mold Type Phototransistor

■ Features 1. High sensitivity ( IC : MIN.160µ A at E V = 100lx, PT380 ) ( IC : MIN.120µ A at E V= 2lx, PT381 ) 2. Compact φ 3mm resin mold package 3. Intermediate acceptance (∆θ : TYP. ± 20˚ ) 4. Visible light cut-off type : PT380F/ PT381F ■ Applications 1. Floppy disk drives 2.

文件：66.27 Kbytes 页数：5 Pages

SHARPSharp Corporation

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