| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Marking：000011；Package：DFN1010D-3；150 V, 500 mA NPN high-voltage low VCEsat (BISS) transistor | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
Marking：00001101；Package：SOT883B；40 V, 100 mA PNP general-purpose transistors Featuresandbenefits *LeadlessultrasmallSMDplastic package *PowerdissipationcomparabletoSOT23 *Lowpackageheightof0.37mm *AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
Marking：00001110；Package：SOT883B；40 V, 100 mA PNP general-purpose transistors Featuresandbenefits *LeadlessultrasmallSMDplastic package *PowerdissipationcomparabletoSOT23 *Lowpackageheightof0.37mm *AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
Marking：00001111；Package：SOT883B；50 V, 100 mA NPN general-purpose transistors Generaldescription NPNgeneral-purposetransistorsinaleadlessultrasmallDFN1006B-3(SOT883B)Surface-MountedDevice(SMD)plasticpackage. Featuresandbenefits ■LeadlessultrasmallSMDplastic package ■PowerdissipationcomparabletoSOT23 ■Lowpackageheightof0.37mm ■AEC | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
Marking：00001111；Package：DFN1006B-3；50 V, 100 mA NPN general-purpose transistors Featuresandbenefits *LeadlessultrasmallSMDplastic package *PowerdissipationcomparabletoSOT23 *Lowpackageheightof0.37mm *AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
Marking：00001100；Package：DFN1006B-3；60 V, single N-channel Trench MOSFET | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA |
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