丝印：Z3；Package：SOT-416；60 V, 290 mA N-channel Trench MOSFET

General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits „ Logic-level compatible „ Very fast switching „ Trench MOSFETtechnology „ E

文件：361.32 Kbytes 页数：16 Pages

恩XP

丝印：Z3；Package：SOT416；60 V, 290 mA N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD prote

文件：460.37 Kbytes 页数：17 Pages

NEXPERIA

安世

60 V, 290 mA N-channel Trench MOSFET

General description\nN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.Features and benefits\n„ Logic-level compatible\n„ Very fast switching\n„ Trench MOSFETtechnology\n„ ESD protection up t

恩XP

60 V, 290 mA N-channel Trench MOSFET

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Nexperia

安世