Small Signal MOSFET 60 V, 340 mA, Single, N?묬hannel, SC??0

Features • ESD Protected • Low RDS(on) • Small Footprint Surface Mount Package • 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

文件：107.65 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

丝印：2N；Package：SOT-323；N-Channel Enhancement Mode Field Effect Transistor

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant

文件：266.34 Kbytes 页数：6 Pages

Fairchild

仙童半导体

300m Amps, 60 Volts N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 2N7002W uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. ■ FEATURES * High Density Cell Design for Low RDS(ON). * Voltage Control

文件：158.79 Kbytes 页数：3 Pages

UTC

友顺

丝印：K7；Package：SOT-323；N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. • Motor Control • Power Management Functions Features and Benefits • Low-On Re

文件：68.63 Kbytes 页数：3 Pages

DIODES

美台半导体

N-Channel Enhancement Mode Field Effect Transistor

Features • Low ON-Resistance • Low Input Capacitance • Low Gate Threshold Voltage • Fast Switching Speed • Low Input/Output Leakage • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1

文件：94.71 Kbytes 页数：4 Pages

MCC

N-Channel MOSFET

Features: * Low On-Resistance : 7.5Ω * Low Input Capacitance: 22PF * Low Output Capacitance : 11PF * Low Threshold Voltage :1 .5V(TYE) * Fast Switching Speed : 7ns

文件：104.72 Kbytes 页数：4 Pages

WEITRON

SMD MOSFET

Features • RDS(ON), VGS@10V, IDS@500mA=5 Ω • RDS(ON), VGS@4.5V, IDS@75mA=7.5 Ω • Advanced trench process technology. • High density cell design for ultra low on-resistance. • Specially designed for battery operated system, solid-state relays drivers, relays, displays, lamps, solenoids

文件：121.83 Kbytes 页数：9 Pages

FORMOSA

美丽微半导体

MOSFET (N-Channel)

SOT-323 Plastic-Encapsulate MOSFETS MOSFET (N-Channel) V(BR)DSS RDS(on)MAX ID 60V 5Ω@10V 115mA 7Ω@5V

文件：1.90804 Mbytes 页数：5 Pages

JIANGSU

长电科技

N-Channel MOSFET

■ Features ● VDS (V) = 60V ● ID = 0.34 A (VGS = 10V) ● RDS(ON)

文件：1.31734 Mbytes 页数：4 Pages

KEXIN

科信电子

Small Signal MOSFET

115 mAMPS, 60VOLTS, RDS(on)=7.5
Small Signal MOSFET N–Channel SOT–323

文件：332.76 Kbytes 页数：3 Pages

SECOS

喜可士