丝印：2N；Package：SOT-363；N-Channel Enhancement Mode Field Effect Transistor

Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant

文件：258.86 Kbytes 页数：6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

丝印：2N；Package：SC70-6；Field Effect Transistor - N-Channel, Enhancement Mode

Features • Dual N−Channel MOSFET • Low On−Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra−Small Surface Mount Package • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：264.79 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：2N；Package：SC-70；60 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology •

文件：283.37 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：2N；Package：SOT-323；N-Channel Enhancement Mode Field Effect Transistor

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant

文件：266.34 Kbytes 页数：6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

丝印：2N；Package：SOT23；Schottky barrier diodes

1.1 General description Planar Schottky barrier diodes with an integrated guard ring for stress protection, encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits  Low forward voltage  Low capacitance  AEC-Q101 qualified 1.3

文件：2.10017 Mbytes 页数：10 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：2N；Package：SOT23；Dual Schottky barrier diode

1. General description Planar dual Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a small SOT23 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low forward voltage • Low capacitance • Qualified according to AEC-Q101 and

文件：194.18 Kbytes 页数：8 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：2N；Package：DFN1006BD-2；Voltage regulator diodes

1. General description General-purpose Zener diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • Leadless ultra small plastic package with side-wettable flanks suitable for surface-mounted

文件：328.92 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：2N；Package：DFN1006BD-2；Voltage regulator diodes

1. General description General-purpose Zener diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • Leadless ultra small plastic package with side-wettable flanks suitable for surface-mounted

文件：329.42 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：2N；Package：SOD-323；1-Line Bi-directional Diode

Features | + 300W peak pulse power (8/20 ps) | + Protects one data or power line + Operating voltage: 36V + Ultra low clamping voltage «Complies with following standards: | IEC 610004-2 (ESD) immunity test | Air discharge: £30kV Contact discharge: £30kV « —IEC61000-4-5 (SURGE) SA

文件：324.24 Kbytes 页数：4 Pages

TECHPUBLIC

台舟电子

丝印：2N；Package：U-DFN2020-3；1 CHANNEL HIGH SURGE TVS DIODE

Features  Provides ESD Protection per IEC 61000-4-2 Standard: Air ±30kV, Contact ±30kV  One Channel of ESD Protection  Low Channel Input Capacitance  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications

文件：498.37 Kbytes 页数：5 Pages

DIODES

美台半导体