丝印：7WA；Package：SOT323；N-CHANNEL ENHANCEMENT MODE MOSFET

Features  N-Channel MOSFET  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Small Surface Mount Package  ESD Protected Gate 1KV  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for

文件：488.7 Kbytes 页数：6 Pages

DIODES

美台半导体

MOSFET

2N7002W-G (N-Channel) RoHS Device Features - High density cell design for low RDS(ON). - Voltage control small signal switch. - Rugged and reliable. - High saturation current capability.

文件：53.22 Kbytes 页数：2 Pages

COMCHIP

典琦

300m Amps, 60 Volts N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 2N7002W uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. ■ FEATURES * High Density Cell Design for Low RDS(ON). * Voltage Control

文件：158.79 Kbytes 页数：3 Pages

UTC

友顺

MOSFET

Features - High density cell design for low RDS(ON). - Voltage controlled small signal switch. - Rugged and reliable. - High saturation current capability.

文件：480.21 Kbytes 页数：5 Pages

COMCHIP

典琦

300m Amps, 60 Volts N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 2N7002W uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. ■ FEATURES * High Density Cell Design for Low RDS(ON). * Voltage Control

文件：158.79 Kbytes 页数：3 Pages

UTC

友顺

Small Signal MOSFET 115 mA, 60 V

N–Channel SOT–323 • We declare that the material of product compliance with RoHS requirements. • ESD Protected:1000V • Pb-Free package is available RoHS product for packing code suffix G Halogen free product for packing code suffix H

文件：374.58 Kbytes 页数：5 Pages

WILLAS

威伦电子

丝印：72Kc；Package：SOT-323；N-Channel Enhancement Mode MOSFET

Features Low on-resistance ESD protected gate up to 2kV HBM High-speed switching Drive circuits can be simple Parallel use is easy

文件：1.83804 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

Small Signal MOSFET 60 V, 340 mA, Single, N?묬hannel, SC??0

Features • ESD Protected • Low RDS(on) • Small Footprint Surface Mount Package • 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

文件：107.65 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：105.95 Kbytes 页数：4 Pages

PANJIT

強茂

60V N-Channel Enhancement Mode MOSFET

文件：168.32 Kbytes 页数：5 Pages

PANJIT

強茂