60V N-Channel Enhancement Mode MOSFET

FEATURES • RDS(ON), VGS@10V,IDS@500mA=5Ω • RDS(ON), VGS@4.5V,IDS@75mA=7.5Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solen

文件：161.83 Kbytes 页数：5 Pages

PANJIT

強茂

丝印：7002；Package：SOT-323；N-Channel Enhancement Mode Field Effect Transistor

Product Summary ● VDS 60V ● ID 340mA ● RDS(ON)( at VGS=10V)

文件：624.06 Kbytes 页数：6 Pages

YANGJIE

扬杰电子

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Mechanical Data Case: SOT-323, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Terminal

文件：1.85407 Mbytes 页数：3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

N-Channel MOSFET

Features ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability

文件：361.76 Kbytes 页数：3 Pages

YFWDIODE

佑风微

Plastic-Encapsulate Mosfets

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package Mechanical Data • Case: SOT-323, Molded Plastic • Terminals: Solderable per MIL-STD-202, Method 208 • Terminal Connectio

文件：459.89 Kbytes 页数：2 Pages

HOTTECH

合科泰

丝印：72Kc；Package：SOT-323；N-Channel Enhancement Mode MOSFET

Features Low on-resistance ESD protected gate up to 2kV HBM High-speed switching Drive circuits can be simple Parallel use is easy

文件：1.83145 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

Plastic-Encapsulated Transistors

MOSFET ( N-Channel ) FEATURES Power dissipation PD : 0.2 W (Tamb=25℃) Collector current ID: 115 mA Collector-base voltage VDS: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：112.83 Kbytes 页数：1 Pages

TEL

N-Channel Enhancement Mode Field Effect Transistor

文件：216.64 Kbytes 页数：4 Pages

MCC

N-Channel Enhancement Mode Field Effect Transistor

文件：196.14 Kbytes 页数：4 Pages

MCC

ESD Protected:1000V

文件：1.33161 Mbytes 页数：6 Pages

LEIDITECH

雷卯电子