丝印：702；Package：SOT-23；Advanced Small Signal MOSFET

BVDSS = 60 V RDS(on) = 5.0 Ω ID = 200 mA FEATURES ● Lower RDS(on) ● Improved Inductive Ruggedness ● Fast Switching Times ● Lower Input Capacitance ● Extended Safe Operating Area ● Improved High Temperature Reliability

文件：162.29 Kbytes 页数：4 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

丝印：702；Package：SOT-23；N-Channel Small Signal MOSFET

文件：116.48 Kbytes 页数：5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel Small Signal MOSFET

文件：116.48 Kbytes 页数：5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel Enhancement Mode Power MOSFET

文件：435.27 Kbytes 页数：3 Pages

LEIDITECH

雷卯电子

60 V, single N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Very fast switching • Trench MOSFET technology • ESD protected 3. Applications

文件：279.69 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

60 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology • Elect

文件：288.98 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司