首页 >2N7002W-TP>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
2N7002W-TP | N-Channel Enhancement Mode Field Effect Transistor | MCCMicro Commercial Components 美微科美微科半导体公司 | ||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Description •N-channelenhancementmodefieldeffecttransistor,designedforhighspeedpulsedamplifieranddriverapplications,whichismanufactoredbytheN-ChannelDMOSprocess. Features •HighdensitycelldesignforlowRDS(ON). •Voltagecontrolledsmallsignalswitching. •Ruggeda | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | |||
N-ChannelEnhancement-ModeVerticalDMOSFETs GeneralDescription TheSupertex2N7002isanenhancement-mode(normallyoff)transistorthatutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors,andtheh | SUTEX Supertex, Inc | |||
N-CHANNELENHANCEMENTMODEVERTICALDMOSFET FEATURES *60VoltVCEO | Zetex Zetex Semiconductors | |||
N-Channel60-V(D-S)MOSFET FEATURES ●LowOn-Resistance:2.5Ω ●LowThreshold:2.1V ●LowInputCapacitance:22pF ●FastSwitchingSpeed:7ns ●LowInputandOutputLeakage BENEFITS ●LowOffsetVoltage ●Low-VoltageOperation ●EasilyDrivenWithoutBuffer ●High-SpeedCircuits ●LowErrorVoltage APPLICATI | VishayVishay Siliconix 威世科技 | |||
N-ChannelEnhancementModeFieldEffectTransistor Description TheseN-channelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileprovidingrugged,reliable,andfastswitchingperformance.Theycanbeused | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
N-CHANNELENHANCEMENT-MODEMOSFET DESCRIPTION: TheCENTRALSEMICONDUCTOR2N7002typeisanN-Channelenhancement-modeMOSFETmanufacturedbytheN-ChannelDMOSProcess,designedforhighspeedpulsedamplifieranddriverapplications. | CentralCentral Semiconductor Corp 美国中央半导体 | |||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Description ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitanc | DIODESDiodes Incorporated 达尔科技 | |||
N-ChannelEnhancementModeFieldEffectTransistor N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | |||
N-ChannelEnhancement-ModeMOSTransistor DESCRIPTION Calogic’s2N7002devicetypeisaverticalDMOSFETtransistorhousedinasurfacemountSOT-23formicro-assemblyapplications.Thedeviceisanexcellentchoiceforswitchingapplicationswherebreakdown(BV)andlowon-resistanceareimportant. | Calogic Calogic | |||
DMOSTransistors(N-Channel) | GE GE Industrial Company | |||
AdvancedSmallSignalMOSFET BVDSS=60V RDS(on)=5.0Ω ID=200mA FEATURES ●LowerRDS(on) ●ImprovedInductiveRuggedness ●FastSwitchingTimes ●LowerInputCapacitance ●ExtendedSafeOperatingArea ●ImprovedHighTemperatureReliability | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
MinisizeofDiscretesemiconductorelements | ETC1List of Unclassifed Manufacturers 未分类制造商 | |||
N-ChannelEnhancementModeFieldEffectTransistor | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | |||
LogicN-ChannelMOSFET GeneralDescription ThisPowerMOSFETisproducedusingplanarDMOStechnology.AndthisPowerMOSFETiswellsuitedforBatteryswitch,Loadswitch,Motorcontrollerandothersmallsignalswitches. Features ■RDS(on)(Max7.5Ω)@VGS=10V RDS(on)(Max7.5Ω)@VGS=4.5V ■GateCharge(Typical | semiWell semiWell | |||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR DESCRIPTION TheUTC2N7002usesadvancedtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES *HighDensityCellDesignforLowRDS(ON). *VoltageControlledSmallSigna | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
N-ChannelSmallSignalMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
N-channel60V-1.8ohm-0.35A-SOT23-3L/TO-92STripFETPowerMOSFET Description ThisPowerMOSFETisthesecondgenerationofSTMicroelectronicsunique“singlefeaturesize”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemark | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
SmallSignalMOSFETN-Channel Features: *LowOn-Resistance:3 *LowInputCapacitance:25PF *LowOutputCapacitance:6PF *LowThreshole:1.5V(TYE) *FastSwitchingSpeed:7.5ns | WEITRONWEITRON 威堂電子科技 | |||
NChannelSmallSignalMOSFET ●DRIVESSWITCHS,RELAYS,SOLENOIDS,LAMPS,DISPLAYS,ETC. ●LOWOFFSETVOLTAGE ●LOWVOLTAGEOPERATION ●EASILYDRIVENWITHOUTBUFFER | STANSONStanson Technology Stanson 科技 |
详细参数
- 型号:
2N7002W-TP
- 功能描述:
MOSFET SNGL N-CH 60V 115mA
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
MCC/美微科 |
23+ |
SOT323 |
45000 |
热卖优势现货 |
询价 | ||
MCC/美微科 |
2020+PB |
SOT323 |
3200 |
原装正品 可含税交易 |
询价 | ||
MCC/美微科 |
SOT323 |
7906200 |
询价 | ||||
MCC |
23+ |
SOT-323 |
7750 |
全新原装优势 |
询价 | ||
Micro |
1925+ |
SOT-323 |
45000 |
真实库存!原装特价!实单必成交! |
询价 | ||
MCC |
19+ |
SOT323 |
200000 |
询价 | |||
MCC |
2002 |
SOT323 |
65000 |
原装正品假一罚万 |
询价 | ||
Micro |
2023+ |
新 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
MCC |
2013+PB |
SOT323 |
3200 |
百分百原装正品现货 |
询价 | ||
Micro |
1942+ |
N/A |
45140 |
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