2N7000

Marking：702；Package：SOT-23；N-Channel Enhancement Mode MOSFET

■Features ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability

2N7002

Marking：702；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Description TheseN-channelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileprovidingrugged,reliable,andfastswitchingperformance.Theycanbeused

2N7002

Marking：702；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Description TheseN−channelenhancementmodefieldeffecttransistorsare producedusingonsemi’sproprietary,highcelldensity,DMOS technology.Theseproductshavebeendesignedtominimizeon−state resistancewhileprovidingrugged,reliable,andfastswitching performance.Theseproducts

2N7002

Marking：702；Package：SOT-23；N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

FEATURES *60VoltVCEO

2N7002

Marking：702；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Description TheseN-channelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileprovidingrugged,reliable,andfastswitchingperformance.Theycanbeused

2N7002

Marking：702；Package：SOT-23；N-CHANNEL ENHANCEMENT-MODE MOSFET

DESCRIPTION: TheCENTRALSEMICONDUCTOR2N7002typeisanN-Channelenhancement-modeMOSFETmanufacturedbytheN-ChannelDMOSProcess,designedforhighspeedpulsedamplifieranddriverapplications.

2N7002

Marking：702；Package：SOT-23；Advanced Small Signal MOSFET

BVDSS=60V RDS(on)=5.0Ω ID=200mA FEATURES ●LowerRDS(on) ●ImprovedInductiveRuggedness ●FastSwitchingTimes ●LowerInputCapacitance ●ExtendedSafeOperatingArea ●ImprovedHighTemperatureReliability

2N7002

Marking：702；Package：SOT-23；SMD Signal DMOS Transistor (N-Channel)

Features •VoltageControlledSmallSignalSwitch •HighDensityCellDesignforLowRDS(ON) •RuggedandReliable •HighSaturationCurrentCapablity •RoHSCompliance

2N7002DS6

Marking：702；Package：SOT-363；Double N-CHANNEL MOSFET in a SOT-363 Plastic Package.

Features SensitivegatetriggercurrentandLowHoldingcurrent.ESDprotecteddiode. ESDrating:2200VHBM Halogen-free

2N7002DW

Marking：702；Package：SOT-363；60V N-Channel Enhancement Mode MOSFET

DUALN-CHANNELENHANCEMENTMODEMOSFETS Thisspace-efficientdevicecontainstwoelectrically-isolatedN-Channelenhancement-modeMOSFETs.ItcomesinaverysmallSOT-363(SC70-6L)package.Thisdeviceisidealforportableapplicationswhereboardspaceisatapremium. FEATURES ●LowOn-Re