首页 >2N7002T>规格书列表

零件编号下载&订购功能描述制造商&上传企业LOGO

2N7002T

N-Channel Plastic-Encapsulate Transistor

Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •LowON-ResistanceandlowInputCapacitance •LowGateThresholdVoltage •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •AvailableinLead

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

2N7002T

Small Signal MOSFET Transistor

FEATURES ●Lowon-resistance. ●Lowgatethresholdvoltge. ●Lowinputcapacitance. ●Fastswitchingspeed. ●Lowinput/outputleakage. APPLICATIONS ●N-channelenhancementmodeeffecttransistor. ●Switchingapplication.

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN

2N7002T

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFree/RoHSCompliant(Note2) •QualifiedtoAEC-Q101StandardsforHighReliability •GreenDevice(Notes3and4)

DIODESDiodes Incorporated

达尔科技

DIODES

2N7002T

MOSFET (N-Channel)

MOSFET(N-Channel) FEATURE ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability APPLICATION ●LoadSwitchforPortableDevices ●DC/DCConverter

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU

2N7002T

N-Channel MOSFET

■Features ●VDS(V)=60V ●ID=115mA ●RDS(ON)

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE

2N7002T

SOT-523 Plastic-Encaps u late MOSFET

N-ChannelMOSFET Features ●HighdensitycelldesignforLowRDS(on) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability ●ESDprotected Applications ●DC/DCConverter ●LoadSwitchforPortableDevices ●BatterySwitch

HDSEMIJiangsu High diode Semiconductor Co., Ltd

苏海德半导体苏海德半导体有限公司

HDSEMI

2N7002T

N-Channel MOSFET

■Features ●VDS(V)=60V ●ID=115mA ●RDS(ON)

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

2N7002T

SOT-523 Plastic-Encapsulate MOSFETS

MOSFET(N-Channel) FEATURES ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability ●Pb-Freepackageisavailable RoHSproductforpackingcodesuffixG Halogenfreeproductforpackingcodesuffi

WILLASWILLAS electronics corp

威倫威倫电子股份有限公司

WILLAS

2N7002T

MOSFET ( N-Channel )

FEATURES Powerdissipation PD:0.15W(Tamb=25℃) Collectorcurrent ID:115mA Collector-basevoltage VDS:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN

2N7002T

Plastic-Encapsulated Transistors

FEATURES Powerdissipation PD:0.15W(Tamb=25℃) Collectorcurrent ID:115mA Collector-basevoltage VDS:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TEL

TRANSYS Electronics Limited

TEL

2N7002T

N-Channel Enhancement Mode Field Effect Transistor

Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFree/RoHSCompliant

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

2N7002T

Small Signal MOSFET

FEATURES ●HighdensitycelldesignforlowRDS(ON). ●Voltagecontrolledsmallsignalswitch. ●Ruggedandreliable. ●Highsaturationcurrentcapability.

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS

2N7002T

N-Channel ENHANCEMENT MODE POWER MOSFET

FEATURES: *FastSwitchingSpeed *LowOn-Resistance *LowVoltageDriver APPLICATIONS: *Drivers:Relays,Solenoids,Lamps,Hammers,Displays,Memories *BatteryOperatedSystems *PowerSupplyConverterCircuits *Load/PowerSwitchingCellPhones,Pagers

WEITRONWEITRON

威堂電子科技

WEITRON

2N7002T

300 mAmps, 60 Volts N-CHANNEL POWER MOSFET

DESCRIPTION TheUTC2N7002Thasbeendesignedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperformance.Itcanbeusedinmostapplicationsrequiringupto400mADCandcandeliverpulsedcurrentsupto2A.Theproductisparticularlysuitedforlowvoltage,

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

2N7002T

N-Channel Plastic- Encapsulate MOSFETS

FEATURES ●HighDensityCellDesignforLowRDS(ON) ●VoltageControlledSmallSignalSwitch ●RuggedandReliable ●HighSaturationCurrentCapability APPLICATION ●LoadSwitchforPortableDevices ●DC/DCConverter

SECELECTRONICS

SEC Electronics Inc.

SECELECTRONICS

2N7002T

SOT-523 Plastic-Encapsulate MOSFETS

MOSFET(N-Channel) FEATURE ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability APPLICATION ●LoadSwitchforPortableDevices ●DC/DCConverter

TGS

Tiger Electronic Co.,Ltd

TGS

2N7002T

Voltage controlled small signal switch

Features ■HighdensitycelldesignforlowRDS(ON) ■Voltagecontrolledsmallsignalswitch ■Ruggedandreliable ■Highsaturationcurrentcapability Applications ■LoadSwitchforPortableDevices ■DC/DCConverter

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

LEIDITECH

2N7002T

N-Channel 60-V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •LowThreshold:2V(typ.) •LowInputCapacitance:25pF •FastSwitchingSpeed:25ns •LowInputandOutputLeakage •TrenchFET®PowerMOSFET •1200VESDProtection •ComplianttoRoHSDirective2002/95/EC BENEFITS •Low

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

2N7002T

SOT-523 Plastic-Encapsulate MOSFETS

FEATURE oHighdensitycelldesignforlowRpson) eoltagecontrolledsmallsignalswitch eRuggedandreliable eHighsaturationcurrentcapability APPLICATION ®LoadSwitchforPortableDevices eDC/DCConverter

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

2N7002T

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DescriptionandApplications ThisnewgenerationMOSFEThasbeendesignedtominimizetheonstateresistance(RDS(on))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagement applications. •DC-DCConverters •Powermanagementfunctions •Battery

DIODESDiodes Incorporated

达尔科技

DIODES

详细参数

  • 型号:

    2N7002T

  • 功能描述:

    MOSFET N-Chan Enhancement Mode Field Effect

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
FAIRCHILD/仙童
23+
SOT-523
45000
热卖优势现货
询价
SOT-523
2021
CJ
119300
全新原装公司现货
询价
CJ原装长电
2339+
SOT-523
32280
原装现货 假一罚十!十年信誉只做原装!
询价
CJ/长晶
21+
SOT523
90000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
SALLTECH
20+
6000
英瑞芯现货库存
询价
FAIRCHILD
22+
SOT-23
13568
实力现货,随便验!
询价
FAIRCHILD/仙童
2020+PB
SOT-523
3650
原装正品 可含税交易
询价
CJ/长电
2021+
SOT-523
9000
原装现货,随时欢迎询价
询价
CJ/长电
21+
SOT-523
60000
绝对原装正品现货,假一罚十
询价
SECOS
SOT523
7906200
询价
更多2N7002T供应商 更新时间2024-4-23 20:19:00