MOSFET

Features - High density cell design for low R DS(ON) - Voltage controlled small signal switch - Rugged and reliable - High saturation current capability

文件：489.09 Kbytes 页数：5 Pages

COMCHIP

典琦

300 mAmps, 60 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 2N7002T has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. The product is particularly suited for low voltage,

文件：148.53 Kbytes 页数：3 Pages

UTC

友顺

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 60 Volts CURRENT 0.250 Ampere FEATURE * Small surface mounting type. (SC-75/SOT-416) * High density cell design for low RDS(ON). * Suitable for high packing density. * Rugged and reliable. * High saturation current capability. * Voltage controlled small signal switch. APPLICATION

文件：252.4 Kbytes 页数：5 Pages

CHENMKO

力勤

N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The 2N7002TQ is suitable fo

文件：439.83 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：72；Package：SOT523；N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The 2N7002TQ is suitable fo

文件：439.83 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：72；Package：SOT523；N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The 2N7002TQ is suitable fo

文件：439.83 Kbytes 页数：5 Pages

DIODES

美台半导体

N-Channel 60V (D-S) MOSFET

文件：1.83389 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：447.74 Kbytes 页数：4 Pages

DIODES

美台半导体

N-Channel Enhancement MOSFET

文件：337.37 Kbytes 页数：3 Pages

SECOS

喜可士

0.115A , 60V , RDS(ON) 7.2廓 N-Channel Enhancement MOSFET

文件：288.82 Kbytes 页数：3 Pages

SECOS

喜可士