丝印：KN；Package：SOD-523；Voltage controlled small signal switch

Features ■ High density cell design for low RDS (ON) ■ Voltage controlled small signal switch ■ Rugged and reliable ■ High saturation current capability Applications ■ Load Switch for Portable Devices ■ DC/DC Converter

文件：1.2579 Mbytes 页数：3 Pages

LEIDITECH

雷卯电子

Small Signal MOSFET

FEATURES ● High density cell design for low RDS(ON). ● Voltage controlled small signal switch. ● Rugged and reliable. ● High saturation current capability.

文件：121.52 Kbytes 页数：3 Pages

SECOS

喜可士

丝印：K72；Package：SOT-523；SOT-523 Plastic-Encapsulate MOSFETS

MOSFET (N-Channel) FEATURE ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability APPLICATION ● Load Switch for Portable Devices ● DC/DC Converter

文件：1.18325 Mbytes 页数：5 Pages

TGS

丝印：K72；Package：SOT-523；SOT-523 Plastic-Encapsulate MOSFETS

FEATURE o High density cell design for low Rpson) e oltage controlled small signal switch e Rugged and reliable e High saturation current capability APPLICATION ® Load Switch for Portable Devices e DC/DC Converter

文件：2.071949 Mbytes 页数：5 Pages

DGNJDZ

南晶电子

MOSFET ( N-Channel )

FEATURES Power dissipation PD: 0.15 W (Tamb=25℃) Collector current ID: 115 mA Collector-base voltage VDS: 60 V Operating and storage junction temperature range TJ,Tstg: -55℃ to +150℃

文件：196.81 Kbytes 页数：2 Pages

WINNERJOIN

永而佳

N-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • TrenchFET® Power MOSFET • 1200V ESD Protection • Compliant to RoHS Directive 2002/95/EC BENEFITS • Low

文件：1.00398 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

SOT-523 Plastic-Encapsulate MOSFETS

MOSFET (N-Channel) FEATURES ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability ● Pb-Free package is available RoHS product for packing code suffix G Halogen free product for packing code suffi

文件：359.47 Kbytes 页数：2 Pages

WILLASWILLAS ELECTRONIC CORP

威伦威伦电子股份有限公司

N-Channel MOSFET

■ Features ● VDS (V) = 60V ● ID = 115mA ● RDS(ON)

文件：583.44 Kbytes 页数：3 Pages

YFWDIODE

佑风微

SOT-523 Plastic-Encaps u late MOSFET

N-Channel MOSFET Features ● Highdensity cell design for Low RDS(on) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability ● ESD protected Applications ● DC/DC Converter ● Load Switch for Portable Devices ● Battery Switch

文件：3.09825 Mbytes 页数：5 Pages

HDSEMI

海德半导体

丝印：K72；Package：SOT-523；N-Channel Plastic- Encapsulate MOSFETS

FEATURES ● High Density Cell Design for Low RDS(ON) ● Voltage Controlled Small Signal Switch ● Rugged and Reliable ● High Saturation Current Capability APPLICATION ● Load Switch for Portable Devices ● DC/DC Converter

文件：191.05 Kbytes 页数：3 Pages

SECELECTRONICS

上优电子