Plastic-Encapsulated Transistors

FEATURES Power dissipation PD: 0.15 W (Tamb=25℃) Collector current ID: 115 mA Collector-base voltage VDS: 60 V Operating and storage junction temperature range TJ,Tstg: -55℃ to +150℃

文件：156.68 Kbytes 页数：2 Pages

TEL

东电电子

N-Channel Enhancement MOSFET

文件：337.37 Kbytes 页数：3 Pages

SECOS

喜可士

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：447.74 Kbytes 页数：4 Pages

DIODES

美台半导体

300mA, 60V N-CHANNEL POWER MOSFET

文件：162.91 Kbytes 页数：3 Pages

UTC

友顺

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant (Note 2) • Qualified to AEC-Q101 Standards for High Reliability • Green Device (Notes 3 and 4)

文件：89.55 Kbytes 页数：4 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant (Note 2) • Qualified to AEC-Q101 Standards for High Reliability • Green Device (Notes 3 and 4)

文件：89.55 Kbytes 页数：4 Pages

DIODES

美台半导体

丝印：72；Package：SOT-523；60V N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES • RDS(ON), VGS@10V,IDS@500mA=5Ω • RDS(ON), VGS@4.5V,IDS@50mA=7.5Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories,

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PANJIT

強茂

N-Channel Plastic- Encapsulate MOSFETS

FEATURES ● High Density Cell Design for Low RDS(ON) ● Voltage Controlled Small Signal Switch ● Rugged and Reliable ● High Saturation Current Capability APPLICATION ● Load Switch for Portable Devices ● DC/DC Converter

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SECELECTRONICS

上优电子

N-Channel MOSFET

■ Features ● VDS (V) = 60V ● ID = 0.29 A ● RDS(ON)

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KEXIN

科信电子

300 mAmps, 60 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 2N7002T has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. The product is particularly suited for low voltage,

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UTC

友顺