丝印：72；Package：SOT-523；60V N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES • RDS(ON), VGS@10V,IDS@500mA=5Ω • RDS(ON), VGS@4.5V,IDS@50mA=7.5Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories,

文件：147.46 Kbytes 页数：5 Pages

PANJIT

強茂

小信号MOSFET

Panjit

強茂

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. • Motor Control • Power Management Functions Features and Benefits • Low-On Re

文件：68.63 Kbytes 页数：3 Pages

DIODES

美台半导体

N-CHANNEL TRANSISTOR

Description N-channel enhancement-mode MOS transistor.

文件：65.17 Kbytes 页数：4 Pages

HSMC

华昕

N-Channel Enhancement-Mode MOS Transistor

DESCRIPTION Calogic’s 2N7002 device type is a vertical DMOS FET transistor housed in a surface mount SOT-23 for micro-assembly applications. The device is an excellent choice for switching applications where breakdown (BV) and low on-resistance are important.

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CALOGIC