2N7002T-C

N-Channel Plastic- Encapsulate MOSFETS

FEATURES ●HighDensityCellDesignforLowRDS(ON) ●VoltageControlledSmallSignalSwitch ●RuggedandReliable ●HighSaturationCurrentCapability APPLICATION ●LoadSwitchforPortableDevices ●DC/DCConverter

2N7002TE

N-ChannelMOSFET

■Features ●VDS(V)=60V ●ID=0.29A ●RDS(ON)

2N7002-TP

N-ChannelMOSFET

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF· •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •AdvancedTrenchProcessTechnology •HighInputImpedance •HighSpeedSwitching •CMOSLogicCompatibleInput •Marking:7002/S72 ··

2N7002TPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE60VoltsCURRENT0.250Ampere FEATURE *Smallsurfacemountingtype.(SC-75/SOT-416) *HighdensitycelldesignforlowRDS(ON). *Suitableforhighpackingdensity. *Ruggedandreliable. *Highsaturationcurrentcapability. *Voltagecontrolledsmallsignalswitch. APPLICATION

2N7002TQ

N-CHANNELENHANCEMENTMODEMOSFET

Features LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage Ultra-SmallSurfaceMountPackage TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) The2N7002TQissuitablefo

2N7002V

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •DualN-ChannelMOSFET •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFreeByDesign/RoHSCompliant(Note2) •QualifiedtoAEC-Q101StandardsforHighReliabil

2N7002V

N-ChannelEnhancementModeFieldEffectTransistor

Features •DualN-ChannelMOSFET •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFreeByDesign/RoHSCompliant

2N7002V

N-ChannelMOSFET

Features •Lowgatethresholdvoltage •Lowinputcapacitance •Lowon-resistance •Lowinput/outputleakage •Marking:KAS •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •Halogenfreeavailableuponrequestbyaddingsuffix-HF

2N7002V

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

2N7002V

MOSFET(N-Channel)

SOT-563Plastic-EncapsulateMOSFETS FEATURE •DualN-channelMOSFET •Lowon-resistance •Lowgatethresholdvoltage •Lowinputcapacitance •Fastswitchingspeed •Lowinput/outputleakage APPLICATION •LoadSwitchforPortableDevices •DC/DCConverter