丝印：K72；Package：SOT-23；N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency po wer management applications. Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitanc

文件：55.51 Kbytes 页数：3 Pages

DIODES

美台半导体

丝印：K72；Package：SOT-363；DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This MOSFET has been designed to minimize the on-state resistance (Rds(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Lo

文件：66.24 Kbytes 页数：3 Pages

DIODES

美台半导体

丝印：K72；Package：SOT-363；Plastic-Encapsulate MOSFETs

Dual N-channel MOSFET FEATURE ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability APPLICATION ● Load Switch for Portable Devices ● DC/DC Converter

文件：2.10736 Mbytes 页数：4 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：K72；Package：SOT363；DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The

文件：397.93 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：K72；Package：SOT363；DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The

文件：397.93 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：K72；Package：SOT-23；N-Ch Small Signal MOSFET with ESD Protection

FEATURES • RDS(ON), VGS@10V, IDS@500mA=3Ω • RDS(ON), VGS@4.5V, IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays Driver

文件：533.11 Kbytes 页数：4 Pages

SECOS

喜可士

丝印：K72；Package：SOT-23；60V N-Channel Enhancement Mode MOSFET – ESD Protected

Features  RDS(ON), VGS@10V, ID@500mA

文件：674.72 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：K72；Package：SOT-23；60V N-Channel Enhancement Mode MOSFET–ESD Protected

Features RDS(ON),VGS@10V,ID@500mA

文件：974.92 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：K72；Package：SOT-323；N-Ch Small Signal MOSFET with ESD Protection

FEATURES • RDS(ON), VGS@10V, IDS@500mA=3Ω • RDS(ON), VGS@4.5V, IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays Driver

文件：533.04 Kbytes 页数：4 Pages

SECOS

喜可士

丝印：K72；Package：SOT-323；N-Ch Small Signal MOSFET with ESD Protection

FEATURES • RDS(ON), VGS@10V, IDS@500mA=3Ω • RDS(ON), VGS@4.5V, IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays Driver

文件：533.04 Kbytes 页数：4 Pages

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