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K72

型号:2N7002;Package:SOT-23;N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitanc

DIODESDiodes Incorporated

美台半导体

DIODES

K72

型号:2N7002DW;Package:SOT-363;Plastic-Encapsulate MOSFETs

DualN-channelMOSFET FEATURE ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability APPLICATION ●LoadSwitchforPortableDevices ●DC/DCConverter

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

K72

型号:2N7002DW;Package:SOT-363;DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(Rds(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features •DualN-ChannelMOSFET •LowOn-Resistance •LowGateThresholdVoltage •Lo

DIODESDiodes Incorporated

美台半导体

DIODES

K72

型号:2N7002DWQ-13-F;Package:SOT363;DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features DualN-ChannelMOSFET LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage Ultra-SmallSurfaceMountPackage TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) The

DIODESDiodes Incorporated

美台半导体

DIODES

K72

型号:2N7002DWQ-7-F;Package:SOT363;DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features DualN-ChannelMOSFET LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage Ultra-SmallSurfaceMountPackage TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) The

DIODESDiodes Incorporated

美台半导体

DIODES

K72

型号:2N7002K;Package:SOT-23;N-Ch Small Signal MOSFET with ESD Protection

FEATURES •RDS(ON),VGS@10V,IDS@500mA=3Ω •RDS(ON),VGS@4.5V,IDS@200mA=4Ω •AdvancedTrenchProcessTechnology •HighDensityCellDesignForUltraLowOn-Resistance •VeryLowLeakageCurrentInOffCondition •SpeciallyDesignedforBatteryOperatedSystems, Solid-StateRelaysDriver

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

K72

型号:2N7002K_R1_00501;Package:SOT-23;60V N-Channel Enhancement Mode MOSFET – ESD Protected

Features RDS(ON),VGS@10V,ID@500mA

PANJITPan Jit International Inc.

強茂強茂股份有限公司

K72

型号:2N7002K-AU_R1_000A2;Package:SOT-23;60V N-Channel Enhancement Mode MOSFET–ESD Protected

Features RDS(ON),VGS@10V,ID@500mA

PANJITPan Jit International Inc.

強茂強茂股份有限公司

K72

型号:2N7002KW;Package:SOT-323;N-Ch Small Signal MOSFET with ESD Protection

FEATURES •RDS(ON),VGS@10V,IDS@500mA=3Ω •RDS(ON),VGS@4.5V,IDS@200mA=4Ω •AdvancedTrenchProcessTechnology •HighDensityCellDesignForUltraLowOn-Resistance •VeryLowLeakageCurrentInOffCondition •SpeciallyDesignedforBatteryOperatedSystems, Solid-StateRelaysDriver

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

K72

型号:2N7002KW;Package:SOT-323;N-Ch Small Signal MOSFET with ESD Protection

FEATURES •RDS(ON),VGS@10V,IDS@500mA=3Ω •RDS(ON),VGS@4.5V,IDS@200mA=4Ω •AdvancedTrenchProcessTechnology •HighDensityCellDesignForUltraLowOn-Resistance •VeryLowLeakageCurrentInOffCondition •SpeciallyDesignedforBatteryOperatedSystems, Solid-StateRelaysDriver

SECELECTRONICS

SEC Electronics Inc.

SECELECTRONICS

详细参数

  • 型号:

    K72

  • 功能描述:

    MOSFET N-CHANNEL 60V 115mA

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
恩XP
15+
SOT23
30000
全新原装
询价
2015+
50
公司现货库存
询价
2015+
50
公司现货库存
询价
ON
17+18+
SOT23
488459
原厂原装,本地现货库存,假一罚十!
询价
长电
11+
SOT23
50000
深圳现货
询价
ON
21+
SOT23
30000
只做原装 有单来谈
询价
恩XP
24+/25+
SOT236
99000
100%原装正品真实库存,支持实单
询价
ON-SEMI
22+
N/A
9000
原装正品 香港现货
询价
恩XP
1118
SOT236
340
现货库存,有单来谈
询价
恩XP
16+
SOT23
12350
进口原装现货/价格优势!
询价
更多K72供应商 更新时间2021-9-16 14:01:00