型号：2N7002KQ-13；Package：SOT23；N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Up To 2kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The 2N7002KQ is suitable for automotive applications requiring s

文件：624.73 Kbytes 页数：7 Pages

美台半导体

型号：2N7002KQ-7；Package：SOT23；N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Up To 2kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The 2N7002KQ is suitable for automotive applications requiring s

文件：624.73 Kbytes 页数：7 Pages

美台半导体

型号：DMN601DWKQ-7；Package：SOT363；DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features  Dual N-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Ultra-Small Surface Mount Package  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony

文件：579.57 Kbytes 页数：7 Pages

美台半导体

型号：K7K1618T2C；512Kx36 & 1Mx18 DDRII CIO b2 SRAM

文件：407.33 Kbytes 页数：19 Pages

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型号：K7K1618U2C；512Kx36 & 1Mx18 DDRII CIO b2 SRAM

文件：600.02 Kbytes 页数：19 Pages

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型号：K7K1636T2C；512Kx36 & 1Mx18 DDRII CIO b2 SRAM

文件：407.33 Kbytes 页数：19 Pages

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型号：K7K1636U2C；512Kx36 & 1Mx18 DDRII CIO b2 SRAM

文件：600.02 Kbytes 页数：19 Pages

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型号：K7K3218T2C；1Mx36 & 2Mx18 DDRII CIO b2 SRAM

文件：406.8 Kbytes 页数：19 Pages

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型号：K7K3218U2C；1Mx36 & 2Mx18 DDRII CIO b2 SRAM

文件：406.12 Kbytes 页数：19 Pages

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型号：K7K3236T2C；1Mx36 & 2Mx18 DDRII CIO b2 SRAM

文件：406.8 Kbytes 页数：19 Pages

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