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2N7002KW

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES •RDS(ON),VGS@10V,IDS@500mA=3Ω •RDS(ON),VGS@4.5V,IDS@200mA=4Ω •AdvancedTrenchProcessTechnology •HighDensityCellDesignForUltraLowOn-Resistance •VeryLowLeakageCurrentInOffCondition •SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays Drivers

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT

2N7002KW

N-Ch Small Signal MOSFET with ESD Protection

FEATURES •RDS(ON),VGS@10V,IDS@500mA=3Ω •RDS(ON),VGS@4.5V,IDS@200mA=4Ω •AdvancedTrenchProcessTechnology •HighDensityCellDesignForUltraLowOn-Resistance •VeryLowLeakageCurrentInOffCondition •SpeciallyDesignedforBatteryOperatedSystems, Solid-StateRelaysDriver

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS

2N7002KW

N-Channel Enhancement Mode Field Effect Transistor

ProductSummary ●VDS60V ●ID340mA ●RDS(ON)(atVGS=10V)

YANGJIEYangzhou yangjie electronic co., ltd

扬州扬杰电子扬州扬杰电子科技股份有限公司

YANGJIE

2N7002KW

N-Channel Enhancement Mode Field Effect Transistor

Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •PbFree/RoHSCompliant •ESDHBM=1000VasperJESD22A114andESDCDM=1500VasperJESD22C101

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

2N7002KW

N-Channel 60-V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •LowOn-Resistance:2Ω •LowThreshold:2V(typ.) •LowInputCapacitance:25pF •FastSwitchingSpeed:25ns •LowInputandOutputLeakage •TrenchFET®PowerMOSFET •1200VESDProtection •ComplianttoRoHSDirective20

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

2N7002KW

N-Channel Enhancement MOSFET

Features ●LowOn-Resistance:RDS(ON) ●LowGateThresholdVoltage ●LowInputCapacitance ●FastSwitchingSpeed ●LowInput/OutputLeakage ●ESDProtected2KVHBM

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE

2N7002KW

N-Channel SMD MOSFET ESD Protection

Features •RDS(ON)=3.0Ω,VGS=10V,@60V/0.50A •RDS(ON)=4.0Ω,VGS=4.5V,@60V/0.20A •ESDproduction2kV(Humanbodymode) •Advancedtrenchprocesstechnology. •Highdensitycelldesignforultralowon-resistance. •Speciallydesignedforbatteryoperatedsystem, solid-staterelaysdr

FORMOSAFormosa MS

美丽微半导体美丽微半导体股份有限公司

FORMOSA

2N7002KW

N-CHANNEL ENHANCEMENT MODE MOSFET

DESCRIPTION TheUTC2N7002KWusesadvancedtechnologytoprovideexcellentRDS(ON),lowgatechargeandlowgatevoltagesduringoperation.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES *LowReverseTransferCapacitance *ESDProtected *FastSwitchingCap

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

2N7002KW

N-Channel MOSFET

N-ChannelMOSFET FEATURE ●HighdensitycelldesignforLowRDS(on) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability ●ESDprotected APPLICATION ●LoadSwitchforPortableDevices ●DC/DCConverter

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU

2N7002KW

N-Channel Enhancement Mode Field Effect Transistor

Features •HighdensitycelldesignforLowRDS(ON) •Voltagecontrolledsmallsignalswitch •Ruggedandreliable •Highsaturationcurrentcapability •LowInput/OutputLeakage •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •Halogenfreeavailableuponreques

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

2N7002KW

N-Ch Small Signal MOSFET with ESD Protection

FEATURES •RDS(ON),VGS@10V,IDS@500mA=3Ω •RDS(ON),VGS@4.5V,IDS@200mA=4Ω •AdvancedTrenchProcessTechnology •HighDensityCellDesignForUltraLowOn-Resistance •VeryLowLeakageCurrentInOffCondition •SpeciallyDesignedforBatteryOperatedSystems, Solid-StateRelaysDriver

SECELECTRONICS

SEC Electronics Inc.

SECELECTRONICS

2N7002KW

N-Channel Enhancement Mode MOSFET

Features Lowon-resistance ESDprotectedgateupto2kVHBM High-speedswitching Drivecircuitscanbesimple Paralleluseiseasy

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟電子台舟電子股份有限公司

TECHPUBLIC

2N7002KWA

N-Channel Enhancement Mode Field Effect Transistor

Features •HighdensitycelldesignforLowRDS(ON) •Voltagecontrolledsmallsignalswitch •Ruggedandreliable •Highsaturationcurrentcapability •LowInput/OutputLeakage •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •Halogenfreeavailableuponreques

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

2N7002KW-AU

60V N-Channel Enhancement Mode MOSFET – ESD Protected

Features RDS(ON),VGS@10V,ID@500mA

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT

2N7002KW-AU_R1_000A1

60V N-Channel Enhancement Mode MOSFET – ESD Protected

Features RDS(ON),VGS@10V,ID@500mA

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT

2N7002KW-CAR

N-Channel MOSFET

FEATURE HighdensitycelldesignforLowRDS(on) Voltagecontrolledsmallsignalswitch Ruggedandreliable Highsaturationcurrentcapability ESDprotected -CARforautomotiveandotherapplicationsrequiringuniquesiteand controlchangerequirements;AEC-Q101qualifiedandPPAPcap

GWSEMIGoodwork Semiconductor Co., Ltd .

唯聖電子唯聖電子有限公司

GWSEMI

2N7002KWG-AL3-R

N-CHANNEL ENHANCEMENT MODE MOSFET

DESCRIPTION TheUTC2N7002KWusesadvancedtechnologytoprovideexcellentRDS(ON),lowgatechargeandlowgatevoltagesduringoperation.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES *LowReverseTransferCapacitance *ESDProtected *FastSwitchingCap

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

2N7002KWQ

N-Channel Enhancement Mode Field Effect Transistor

ProductSummary ●VDS60V ●ID340mA ●RDS(ON)(atVGS=10V)

YANGJIEYangzhou yangjie electronic co., ltd

扬州扬杰电子扬州扬杰电子科技股份有限公司

YANGJIE

2N7002KWT1

380mA N-channel Small Signal MOSFET-60V

Features •ESDProtected •LowRDS(on) •SurfaceMountPackage •ThisisaPb−FreeDevice •WedeclarethatthematerialofproductareHalogenFreeand compliancewithRoHSrequirements. •S-PrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequi

WILLASWILLAS electronics corp

威倫威倫电子股份有限公司

WILLAS

2N7002KW_10

60V N-Channel Enhancement Mode MOSFET - ESD Protected

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT

详细参数

  • 型号:

    2N7002KW

  • 功能描述:

    MOSFET NCHAN Enhance MOSFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
FAIRCHILD/仙童
23+
SOD-323
45000
热卖优势现货
询价
ON
21+
SOT323
6000
原装正品可支持验货,欢迎咨询
询价
PANJIT
2024+
SOT-323
32560
原装优势绝对有货
询价
长电
18+
SOT-323
65000
一级代理/全新现货/长期供应!!
询价
PANJIN
2019+
SOT323
36000
原盒原包装 可BOM配套
询价
FAIRCHILD/仙童
20+原装正品
SOT323
6000
大量现货,免费发样。
询价
ON
23+
SOT323
78900000
原厂直接发货进口原装18930689907微信/QQ893727827
询价
FSC
1628+
SOT323
12
原装库存有订单来谈优势
询价
PANJIT/强茂
22+
SOT323
996000
郑重承诺只做原装进口现货
询价
PANJIT/强茂
22+
SOT323
996000
只做原装进口现货
询价
更多2N7002KW供应商 更新时间2024-4-26 20:23:00