2N7002K

Marking：7K***；Package：SOT-23；N-Channel 60-V (D-S) MOSFET

DESCRIPTION Theattachedspicemodeldescribesthetypicalelectricalcharacteristicsofthen-channelverticalDMOS.Thesubcircuitmodelisextractedandoptimizedoverthe−55to125°Ctemperaturerangesunderthepulsed0-Vto10-Vgatedrive.Thesaturatedoutputimpedanceisbestfitatthe

2N7002K

Marking：C7K；Package：SOT-23；N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. FeaturesandBenefits •LowOn-Resistance •LowInputCapacitance •FastSwitchingSpeed

2N7002K

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES •RDS(ON),VGS@10V,IDS@500mA=3Ω •RDS(ON),VGS@4.5V,IDS@200mA=4Ω •AdvancedTrenchProcessTechnology •HighDensityCellDesignForUltraLowOn-Resistance •VeryLowLeakageCurrentInOffCondition •SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays Drivers

2N7002K

NCE N-Channel Enhancement Mode Power MOSFET

GENERALFEATURES ●VDS=60V,ID=0.3A RDS(ON)

2N7002K

Marking：7K；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •PbFree/RoHSCompliant •ESDHBM=2000V(Typical:3000V)asperJESD22A114 andESDCDM=2000VasperJESD2

2N7002K

Direct Logic-Level Interface: TTL/CMOS

GENERALFEATURES ●VDS=60V,ID=0.3A RDS(ON)

2N7002K

N-Channel MOSFET

Features •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •HighdensitycelldesignforlowRDS(ON) •Voltagecontrolledsmallsignalswitch •Ruggedandreliable •ESDProtectedupto2KV(HBM) •Marking:72K •Halogenfreeavailableuponrequestbyaddingsuff

2N7002K

N-Channel Enhanceent Mode Field Effect Transistor

Features ●LowOn-Resistance:RDS(ON) ●LowGateThresholdVoltage ●LowInputCapacitance ●FastSwitchingSpeed ●LowInput/OutputLeakage

2N7002K

Marking：704；Package：SOT-23；Small Signal MOSFET 60 V, 380 mA, Single, N?묬hannel, SOT??3

Features •ESDProtected •LowRDS(on) •SurfaceMountPackage •2VPrefixforAutomotiveandOtherApplicationsRequiringUniqueSiteandControlChangeRequirements;AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant Applications

2N7002K

300m Amps, 60 Volts N-CHANNEL ENHANCEMENT MODE MOSFET

DESCRIPTION TheUTC2N7002KusesadvancedtechnologytoprovideexcellentRDS(ON),lowgatechargeandlowgatevoltagesduringoperation.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. „FEATURES *LowReverseTransferCapacitance(CRSS=typical3.0pF) *ESDProt