丝印：H702K；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

General Features VDS = 60V,ID = 0.3A RDS(ON)

文件：701.39 Kbytes 页数：8 Pages

RECTRON

丽正国际

丝印：-2K；Package：SOT-23；N-channel TrenchMOS FET

General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. Features ■ Logic level compatible ■ Very fast switching ■ Subminiature surface-mounted package ■ Gate-source ElectroStatic Discharge (ESD) protection diodes Applicat

文件：94.25 Kbytes 页数：11 Pages

恩XP

60V ESD Protected N-Channel Enhancement Mode MOSFET

RDS(ON), VGS @10V, IDS@ 500mA=2Ω RDS(ON), VGS @4.5V, IDS@ 200mA=3Ω FEATURES • Advanced Trench Process Technology • Ultra Low On Resistance : 2Ω • Fast Switching Speed : 20ns • Low Input and Output Leakage Current • 2KV ESD Protection • Specially Designed for High Speed Circuit, Battery Ope

文件：251.12 Kbytes 页数：4 Pages

HY

虹扬科技

N-CHannel Enhancement Mode MOSFET

High Speed Switching Application Features • ESD rating: 1000V (HBM) • Low On-Resistance: RDS(on)

文件：242.86 Kbytes 页数：6 Pages

KODENSHI

可天士

N-Channel Enhanceent Mode Field Effect Transistor

Features ● Low On-Resistance: RDS(ON) ● Low Gate Threshold Voltage ● Low Input Capacitance ● Fast Switching Speed ● Low Input/Output Leakage

文件：41.11 Kbytes 页数：1 Pages

KEXIN

科信电子

NCE N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES ● VDS = 60V,ID = 0.3A RDS(ON)

文件：295.95 Kbytes 页数：7 Pages

NCEPOWER

新洁能

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays Drivers

文件：161.6 Kbytes 页数：5 Pages

PANJIT

強茂

丝印：72K；Package：SOT23；N-Channel Advanced Power MOSFET

Features • 60V/0.2A, RDS (ON) =2500mΩ(Typ.)@VGS=10V RDS (ON) =2500mΩ(Typ.)@VGS=5V • ESD protected up to 2KV • Low On-Resistance • Super High Dense Cell Design • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Applications • Power Management in Desktop C

文件：411.62 Kbytes 页数：8 Pages

RUICHIPS

锐骏半导体

丝印：K72；Package：SOT-23；N-Ch Small Signal MOSFET with ESD Protection

FEATURES • RDS(ON), VGS@10V, IDS@500mA=3Ω • RDS(ON), VGS@4.5V, IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays Driver

文件：533.11 Kbytes 页数：4 Pages

SECOS

喜可士

Direct Logic-Level Interface: TTL/CMOS

GENERAL FEATURES ● VDS = 60V,ID = 0.3A RDS(ON)

文件：300.32 Kbytes 页数：5 Pages

SILIKRON

新硅能微电子