2N7002K

N Channel MOSFET

INTERFACEANDSWITCHINGAPPLICATION. FEATURES •ESDProtected2000V. •HighdensitycelldesignforlowRDS(ON). •Voltagecontrolledsmallsignalswitch. •Ruggedandreliable. •Highsaturationcurrentcapablity.

2N7002K

Marking：704；Package：SOT-23；Small Signal MOSFET 60 V, 380 mA, Single, N?묬hannel, SOT??3

Features •ESDProtected •LowRDS(on) •SurfaceMountPackage •2VPrefixforAutomotiveandOtherApplicationsRequiringUniqueSiteandControlChangeRequirements;AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant Applications

2N7002K

Plastic-Encapsulate Mosfets

N-ChannelMOSFET FEATURES HighdensitycelldesignforlowRDS(ON) Voltagecontrolledsmallsignalswitch. Ruggedandreliable. Highsaturationcurrentcapability.

2N7002K

Marking：72K；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

ProductSummary ●VDS60V ●ID340mA ●RDS(ON)(atVGS=10V)

2N7002K

N-CHannel Enhancement Mode MOSFET

HighSpeedSwitchingApplication Features •ESDrating:1000V(HBM) •LowOn-Resistance:RDS(on)

2N7002K

N-Channel Enhancement MOSFET

Features ●LowOn-Resistance:RDS(ON) ●LowGateThresholdVoltage ●LowInputCapacitance ●FastSwitchingSpeed ●LowInput/OutputLeakage ●ESDProtected2KVHBM

2N7002K

Marking：K72；Package：SOT-23；N-Ch Small Signal MOSFET with ESD Protection

FEATURES •RDS(ON),VGS@10V,IDS@500mA=3Ω •RDS(ON),VGS@4.5V,IDS@200mA=4Ω •AdvancedTrenchProcessTechnology •HighDensityCellDesignForUltraLowOn-Resistance •VeryLowLeakageCurrentInOffCondition •SpeciallyDesignedforBatteryOperatedSystems, Solid-StateRelaysDriver

2N7002K

N-Channel Enhancement Mode MOSFET

Features ●60V/0.5A,RDS(ON)=2.5Ω@VGS=10V RDS(ON)=2.5Ω@VGS=4.5V ●SOT-23forSurfaceMountPackage. Applications ●DirectLogic-levelInterface:TTL/CMOS. ●Drivers:Relays,Lamps,Display,Transistor,etc ●BatteryOperatedSystems.

2N7002K

Voltage controlled small signal switch

MOSFET(N-Channel) FEATURES ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability

2N7002K

SOT-23 Plastic-Encapsu l ate MOSFET

N-ChannelMOSFET Features ●HighdensitycelldesignforLowRDS（on） ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability ●ESDprotected Applications ●LoadSwitchforPortableDevices ●DC/DCConverter