2N7002K_V01

60V N-Channel Enhancement Mode MOSFET – ESD Protected

Features RDS(ON),VGS@10V,ID@500mA

2N7002K2

Advanced trench MOSFETprocess technology

FeaturesandBenefits: AdvancedtrenchMOSFETprocesstechnology SpecialdesignedforPWM,loadswitchingand generalpurposeapplications Ultralowon-resistancewithlowgatecharge HighPowerandcurrenthandingcapability FullyAvalancheRated ESDProtectionHBM≥2KV Descr

2N7002K36

Marking：702；Package：SOT-23-6L；Double N-CHANNEL MOSFET in a SOT23-6L Plastic Package.

Features SensitivegatetriggercurrentandLowHoldingcurrent.ESDprotecteddiode. ESDrating:2200VHBM Applications Intendedforuseingeneralpurposeswitchingandphasecontrolapplications.

2N7002K-7

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. FeaturesandBenefits •LowOn-Resistance •LowInputCapacitance •FastSwitchingSpeed

2N7002K-7DITR-ND

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. FeaturesandBenefits •LowOn-Resistance •LowInputCapacitance •FastSwitchingSpeed

2N7002KA

N Channel MOSFET

INTERFACEANDSWITCHINGAPPLICATION. FEATURES •ESDProtected2000V. •HighdensitycelldesignforlowRDS(ON). •Voltagecontrolledsmallsignalswitch. •Ruggedandreliable. •Highsaturationcurrentcapablity. •SuffixU:QualifiedtoAEC-Q101. ex)2N7002KA-RTK/HU.

2N7002KA

N-Channel MOSFET

Features •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •HighdensitycelldesignforlowRDS(ON) •Voltagecontrolledsmallsignalswitch •Ruggedandreliable •ESDProtectedupto2.5KV(HBM) •Halogenfreeavailableuponrequestbyaddingsuffix-HF

2N7002KA

Marking：7002K；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

GeneralFeatures VDS=60V,ID=0.32A RDS(ON)

2N7002K-AU

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES •RDS(ON),VGS@10V,IDS@500mA=3Ω •RDS(ON),VGS@4.5V,IDS@200mA=4Ω •AdvancedTrenchProcessTechnology •HighDensityCellDesignForUltraLowOn-Resistance •VeryLowLeakageCurrentInOffCondition •SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays

2N7002K-AU_A0_00001

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES •RDS(ON),VGS@10V,IDS@500mA=3Ω •RDS(ON),VGS@4.5V,IDS@200mA=4Ω •AdvancedTrenchProcessTechnology •HighDensityCellDesignForUltraLowOn-Resistance •VeryLowLeakageCurrentInOffCondition •SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays