丝印：K72；Package：SOT-23；60V N-Channel Enhancement Mode MOSFET – ESD Protected

Features  RDS(ON), VGS@10V, ID@500mA

文件：674.72 Kbytes 页数：6 Pages

PANJIT

強茂

60V N-Channel Enhancement Mode MOSFET – ESD Protected

Features  RDS(ON), VGS@10V, ID@500mA

文件：674.72 Kbytes 页数：6 Pages

PANJIT

強茂

N-Channel Enhancement MOSFET

Features Low On-Resistance:RDS(ON) Low GateThresholdVoltage Low InputCapacitance Fast SwitchingSpeed Low Input/OutputLeakage ESD Protected 2KV HBM

文件：512.299 Kbytes 页数：4 Pages

YFWDIODE

佑风微

Advanced trench MOSFETprocess technology

Features and Benefits:  Advanced trench MOSFETprocess technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  HighPower and current handing capability  Fully Avalanche Rated  ESD Protection HBM ≥ 2KV Descr

文件：657.91 Kbytes 页数：6 Pages

SILIKRON

新硅能微电子

丝印：702；Package：SOT-23-6L；Double N-CHANNEL MOSFET in a SOT23-6L Plastic Package.

Features Sensitive gate trigger current and Low Holding current.ESD protected diode. ESD rating:2200V HBM Applications Intended for use in general purpose switching and phase control applications.

文件：283.89 Kbytes 页数：6 Pages

RECTRON

丽正

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits • Low On-Resistance • Low Input Capacitance • Fast Switching Speed

文件：127.12 Kbytes 页数：4 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits • Low On-Resistance • Low Input Capacitance • Fast Switching Speed

文件：127.12 Kbytes 页数：4 Pages

DIODES

美台半导体

N-Channel MOSFET

Features • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • High density cell design for low RDS(ON) • Voltage controlled small signal switch • Rugged and reliable • ESD Protected up to 2.5KV (HBM) • Halogen free available upon request by adding suffix -HF

文件：641.93 Kbytes 页数：4 Pages

MCC

丝印：7002K；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

General Features VDS = 60V,ID = 0.32A RDS(ON)

文件：347.03 Kbytes 页数：7 Pages

RECTRON

丽正

N Channel MOSFET

INTERFACE AND SWITCHING APPLICATION. FEATURES • ESD Protected 2000V. • High density cell design for low RDS(ON). • Voltage controlled small signal switch. • Rugged and reliable. • High saturation current capablity. • Suffix U : Qualified to AEC-Q101. ex) 2N7002KA-RTK/HU.

文件：378.36 Kbytes 页数：3 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司