N Channel MOSFET

INTERFACE AND SWITCHING APPLICATION. FEATURES • ESD Protected 2000V. • High density cell design for low RDS(ON). • Voltage controlled small signal switch. • Rugged and reliable. • High saturation current capablity. • Suffix U : Qualified to AEC-Q101. ex) 2N7002KA-RTK/HU.

文件：378.36 Kbytes 页数：3 Pages

KEC

KEC(Korea Electronics)

N-Channel MOSFET

Features • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • High density cell design for low RDS(ON) • Voltage controlled small signal switch • Rugged and reliable • ESD Protected up to 2.5KV (HBM) • Halogen free available upon request by adding suffix -HF

文件：641.93 Kbytes 页数：4 Pages

MCC

丝印：7002K；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

General Features VDS = 60V,ID = 0.32A RDS(ON)

文件：347.03 Kbytes 页数：7 Pages

RECTRON

丽正国际

N-channel TrenchMOS FET

General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. Features ■ Logic level compatible ■ Very fast switching ■ Subminiature surface-mounted package ■ Gate-source ElectroStatic Discharge (ESD) protection diodes Applicat

文件：94.25 Kbytes 页数：11 Pages

恩XP

丝印：2P；Package：SOT-23；N Channel MOSFET ESD Protected 2000V

文件：51.79 Kbytes 页数：3 Pages

KEC

KEC(Korea Electronics)

INTERFACE AND SWITCHING APPLICATION.

文件：364.23 Kbytes 页数：3 Pages

KEC

KEC(Korea Electronics)

N Channel MOSFET ESD Protected 2000V

文件：51.79 Kbytes 页数：3 Pages

KEC

KEC(Korea Electronics)

Small Signal MOSFETS

MCC

美微科

N-Channel MOSFET

Comchip

典琦