| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 页数：7 Pages | PANJIT 強茂 | PANJIT | ||
60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 页数：7 Pages | PANJIT 強茂 | PANJIT | ||
60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 页数：7 Pages | PANJIT 強茂 | PANJIT | ||
60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 页数：7 Pages | PANJIT 強茂 | PANJIT | ||
60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 页数：7 Pages | PANJIT 強茂 | PANJIT | ||
60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 页数：7 Pages | PANJIT 強茂 | PANJIT | ||
60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 页数：7 Pages | PANJIT 強茂 | PANJIT | ||
60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 页数：7 Pages | PANJIT 強茂 | PANJIT | ||
60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 页数：7 Pages | PANJIT 強茂 | PANJIT | ||
60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 页数：7 Pages | PANJIT 強茂 | PANJIT |
技术参数
- Automotive Compliant PPAP：
On Request*
- Polarity：
N
- ESD Diodes：
Yes
- VDS：
60 V
- VGS：
20 ±V
- IDS @ TA = +25°C：
0.3 A
- PD @ TA = +25°C：
0.35 W
- RDS(ON) Max @ VGS (10V)：
2000 mΩ
- RDS(ON) Max @ VGS (4.5V)：
3000 mΩ
- RDS(ON) Max @ VGS (2.5V)：
N/A mΩ
- RDS(ON) Max @ VGS (1.8V)：
N/A mΩ
- VGS (th) Max：
2.5 V
- QG Typ @ VGS = 4.5V (nC)：
N/A nC
- QG Typ @ VGS = 10V (nC)：
N/A nC
- Packages：
SOT23
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
25+ |
SOT-23 |
38963 |
FAIRCHILD/仙童全新特价2N7002K即刻询购立享优惠#长期有货 |
询价 | ||
PANJIT/强茂 |
26+ |
SOT-23 |
60000 |
原厂原装现货 价超好实单必成 |
询价 | ||
Diodes |
24+ |
SOT23 |
21000 |
只做原正品!假一赔十公司现货 |
询价 | ||
AP |
24+ |
SOT23-3 |
9700 |
绝对原装正品现货假一罚十 |
询价 | ||
CJ/长电 |
23+ |
SOT-23 |
32078 |
10年以上分销商,原装进口件,服务型企业 |
询价 | ||
H-DIODE海德 |
25+ |
- |
918000 |
明嘉莱只做原装正品现货 |
询价 | ||
群鑫 |
22+ |
SOT23 |
30000 |
原装正品 一级代理 |
询价 | ||
FAIRCHILD/仙童 |
2020+PB |
SOT-23 |
3600 |
原装正品 可含税交易 |
询价 | ||
CJ/长电 |
2021+ |
SOT-23(SOT-23-3) |
9000 |
原装现货,随时欢迎询价 |
询价 | ||
SILIKRON |
22+23+ |
SOT-23 |
85192 |
代理假一罚十全新原装现货可送货 |
询价 |
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