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2N7002K-AU_F0_00001

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES •RDS(ON),VGS@10V,IDS@500mA=3Ω •RDS(ON),VGS@4.5V,IDS@200mA=4Ω •AdvancedTrenchProcessTechnology •HighDensityCellDesignForUltraLowOn-Resistance •VeryLowLeakageCurrentInOffCondition •SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays

PANJITPan Jit International Inc.

強茂強茂股份有限公司

2N7002K-AU_F0_10001

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES •RDS(ON),VGS@10V,IDS@500mA=3Ω •RDS(ON),VGS@4.5V,IDS@200mA=4Ω •AdvancedTrenchProcessTechnology •HighDensityCellDesignForUltraLowOn-Resistance •VeryLowLeakageCurrentInOffCondition •SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays

PANJITPan Jit International Inc.

強茂強茂股份有限公司

2N7002K-AU_F1_00001

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES •RDS(ON),VGS@10V,IDS@500mA=3Ω •RDS(ON),VGS@4.5V,IDS@200mA=4Ω •AdvancedTrenchProcessTechnology •HighDensityCellDesignForUltraLowOn-Resistance •VeryLowLeakageCurrentInOffCondition •SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays

PANJITPan Jit International Inc.

強茂強茂股份有限公司

2N7002K-AU_F1_10001

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES •RDS(ON),VGS@10V,IDS@500mA=3Ω •RDS(ON),VGS@4.5V,IDS@200mA=4Ω •AdvancedTrenchProcessTechnology •HighDensityCellDesignForUltraLowOn-Resistance •VeryLowLeakageCurrentInOffCondition •SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays

PANJITPan Jit International Inc.

強茂強茂股份有限公司

2N7002K-AU_F2_00001

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES •RDS(ON),VGS@10V,IDS@500mA=3Ω •RDS(ON),VGS@4.5V,IDS@200mA=4Ω •AdvancedTrenchProcessTechnology •HighDensityCellDesignForUltraLowOn-Resistance •VeryLowLeakageCurrentInOffCondition •SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays

PANJITPan Jit International Inc.

強茂強茂股份有限公司

2N7002K-AU_F2_10001

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES •RDS(ON),VGS@10V,IDS@500mA=3Ω •RDS(ON),VGS@4.5V,IDS@200mA=4Ω •AdvancedTrenchProcessTechnology •HighDensityCellDesignForUltraLowOn-Resistance •VeryLowLeakageCurrentInOffCondition •SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays

PANJITPan Jit International Inc.

強茂強茂股份有限公司

2N7002K-AU_FD_00001

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES •RDS(ON),VGS@10V,IDS@500mA=3Ω •RDS(ON),VGS@4.5V,IDS@200mA=4Ω •AdvancedTrenchProcessTechnology •HighDensityCellDesignForUltraLowOn-Resistance •VeryLowLeakageCurrentInOffCondition •SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays

PANJITPan Jit International Inc.

強茂強茂股份有限公司

2N7002K-AU_FD_10001

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES •RDS(ON),VGS@10V,IDS@500mA=3Ω •RDS(ON),VGS@4.5V,IDS@200mA=4Ω •AdvancedTrenchProcessTechnology •HighDensityCellDesignForUltraLowOn-Resistance •VeryLowLeakageCurrentInOffCondition •SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays

PANJITPan Jit International Inc.

強茂強茂股份有限公司

2N7002K-AU_FU_00001

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES •RDS(ON),VGS@10V,IDS@500mA=3Ω •RDS(ON),VGS@4.5V,IDS@200mA=4Ω •AdvancedTrenchProcessTechnology •HighDensityCellDesignForUltraLowOn-Resistance •VeryLowLeakageCurrentInOffCondition •SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays

PANJITPan Jit International Inc.

強茂強茂股份有限公司

2N7002K-AU_FU_10001

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES •RDS(ON),VGS@10V,IDS@500mA=3Ω •RDS(ON),VGS@4.5V,IDS@200mA=4Ω •AdvancedTrenchProcessTechnology •HighDensityCellDesignForUltraLowOn-Resistance •VeryLowLeakageCurrentInOffCondition •SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays

PANJITPan Jit International Inc.

強茂強茂股份有限公司

技术参数

  • Automotive Compliant PPAP:

    On Request*

  • Polarity:

    N

  • ESD Diodes:

    Yes

  • VDS:

    60 V

  • VGS:

    20 ±V

  • IDS @ TA = +25°C:

    0.3 A

  • PD @ TA = +25°C:

    0.35 W

  • RDS(ON) Max @ VGS (10V):

    2000 mΩ

  • RDS(ON) Max @ VGS (4.5V):

    3000 mΩ

  • RDS(ON) Max @ VGS (2.5V):

    N/A mΩ

  • RDS(ON) Max @ VGS (1.8V):

    N/A mΩ

  • VGS (th) Max:

    2.5 V

  • QG Typ @ VGS = 4.5V (nC):

    N/A nC

  • QG Typ @ VGS = 10V (nC):

    N/A nC

  • Packages:

    SOT23

供应商型号品牌批号封装库存备注价格
PANJIT/强茂
22+
SOT23
98800
欢迎来电咨询 只做原装
询价
FAIRCHILD/仙童
25+
SOT-23
38963
FAIRCHILD/仙童全新特价2N7002K即刻询购立享优惠#长期有货
询价
Diodes
24+
SOT23
21000
只做原正品!假一赔十公司现货
询价
AP
24+
SOT23-3
9700
绝对原装正品现货假一罚十
询价
CJ/长电
23+
SOT-23
32078
10年以上分销商,原装进口件,服务型企业
询价
长电/长晶
23+
SOT-23
60000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
CJ/长电
21+
10560
十年专营,原装现货,假一赔十
询价
恩XP
20+
SOT-23
2000
只做原装正品假一赔十!正规渠道订货!
询价
H-DIODE海德
25+
-
918000
明嘉莱只做原装正品现货
询价
群鑫
22+
SOT23
30000
原装正品 一级代理
询价
更多2N7002K供应商 更新时间2025-7-28 9:03:00