2N7002K

N Channel Enhancement Mode MOSFET

FEATURE ●60V/0.50A,RDS(ON)=2Ω@VGS=10V ●60V/0.20A,RDS(ON)=4Ω@VGS=4.5V ●SuperhighdensitycelldesignforextremelylowRDS(ON) ●Exceptionalon-resistanceandMaximumDCcurrentcapability ●ESDcapability:2000V ●SOT-23packagedesign

2N7002K

60V ESD Protected N-Channel Enhancement Mode MOSFET

RDS(ON),VGS@10V,IDS@500mA=2Ω RDS(ON),VGS@4.5V,IDS@200mA=3Ω FEATURES •AdvancedTrenchProcessTechnology •UltraLowOnResistance:2Ω •FastSwitchingSpeed:20ns •LowInputandOutputLeakageCurrent •2KVESDProtection •SpeciallyDesignedforHighSpeedCircuit,BatteryOpe

2N7002K

Marking：72K；Package：SOT23；N-Channel Advanced Power MOSFET

Features •60V/0.2A, RDS(ON)=2500mΩ(Typ.)@VGS=10V RDS(ON)=2500mΩ(Typ.)@VGS=5V •ESDprotectedupto2KV •LowOn-Resistance •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeandGreenDevicesAvailable(RoHSCompliant) Applications •PowerManagementinDesktopC

2N7002K

Marking：72K；Package：SOT-23；Plastic-Encapsulate MOSFETS

MOSFET(N-Channel) Features: 1.RDS(ON)islow; 2.Thecontroltriggerissensitive; 3.Withelectrostaticprotection; Applications: Usedforgeneralswitchingandphasecircuits.

2N7002K

Marking：72K；Package：SOT-23；SOT-23 Plastic-Encapsulate MOSFETs

N-channelMOSFET FEATURE ●HighdensitycelldesignforLowRDS（on） ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability ●ESDprotected APPLICATION ●LoadSwitchforPortableDevices ●DC/DCConverter

2N7002K

Marking：702K；Package：SOT-23；SOT-23 Plastic-Encapsulate MOSFETS

FEATURE ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability ●HMBESDprotected(2000V) APPLICATION ●LoadSwitchforPortableDevices ●DC/DCConverter

2N7002K

Marking：7002K；Package：SOT-23；N-Channel Enhancement MOSFET

Features LowOn-Resistance:RDS(ON) LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage ESDProtected2KVHBM

2N7002K

TrenchMOS™ logic level FET

1.1Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusing TrenchMOS™technology. 1.2Features 1.3Applications 1.4Quickreferencedata nLogiclevelcompatiblenVeryfastswitching nSubminiaturesurfacemountpackagenGate-sourceESDprotectiondiodes

2N7002K

Marking：7002；Package：SOT23；60V N-Channel Mosfet

Application Directlogic-levelinterface:TTL/CMOS Drivers:relays,solenoids,lamps,hammersdisplay, memories,transistors,etc. Batteryoperatedsystems Solid-staterelays

2N7002K

Marking：72K；Package：SOT-23；Plastic-Encapsulate MOSFET

Features HighdensitycelldesignforlowRDS(ON). Voltagecontrolledsmallsignalswitch. Ruggedandreliable. Highsaturationcurrentcapability. ESDprotected LoadSwitchforPortableDevices. DC/DCConverter.