N Channel Enhancement Mode MOSFET

FEATURE ● 60V/0.50A, RDS(ON) =2Ω @VGS = 10V ● 60V/0.20A, RDS(ON) = 4Ω@VGS = 4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and Maximum DC current capability ● ESD capability: 2000V ● SOT-23 package design

文件：268.3 Kbytes 页数：7 Pages

STANSON

司坦森

丝印：72K；Package：SOT-23；SOT-23 Plastic-Encapsulate MOSFETs

N-channel MOSFET FEATURE ● High density cell design for Low RDS（on） ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability ● ESD protected APPLICATION ● Load Switch for Portable Devices ● DC/DC Converter

文件：1.30336 Mbytes 页数：5 Pages

TGS

丝印：72K；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Product Summary ● VDS 60V ● ID 340mA ● RDS(ON)( at VGS=10V)

文件：619.19 Kbytes 页数：6 Pages

YANGJIE

扬杰电子

Voltage controlled small signal switch

MOSFET (N-Channel) FEATURES ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability

文件：1.49308 Mbytes 页数：2 Pages

DGNJDZ

南晶电子

丝印：702K；Package：SOT-23；SOT-23 Plastic-Encapsulate MOSFETS

FEATURE ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability ● HMB ESD protected (2000V) APPLICATION ● Load Switch for Portable Devices ● DC/DC Converter

文件：1.40128 Mbytes 页数：5 Pages

CHENDA

辰达半导体

N-Channel Enhancement Mode MOSFET

Features ● 60V / 0.5A, RDS(ON) = 2.5 Ω @ VGS = 10V RDS(ON) = 2.5 Ω @ VGS = 4.5V ● SOT-23 for Surface Mount Package. Applications ● Direct Logic-level Interface: TTL/CMOS. ● Drivers: Relays, Lamps, Display, Transistor, etc ● Battery Operated Systems.

文件：463.82 Kbytes 页数：3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

TrenchMOS™ logic level FET

1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features 1.3 Applications 1.4 Quick reference data n Logic level compatible n Very fast switching n Subminiature surface mount package n Gate-source ESD protection diodes

文件：347.49 Kbytes 页数：13 Pages

NEXPERIA

安世

丝印：72K；Package：SOT-23；Plastic-Encapsulate MOSFET

Features  High density cell design for low RDS(ON).  Voltage controlled small signal switch.  Rugged and reliable.  High saturation current capability.  ESD protected  Load Switch for Portable Devices.  DC/DC Converter.

文件：1.406 Mbytes 页数：3 Pages

GWSEMI

唯圣电子

N-Channel Enhancement MOSFET

Features ● Low On-Resistance: RDS(ON) ● Low Gate Threshold Voltage ● Low Input Capacitance ● Fast Switching Speed ● Low Input/Output Leakage ● ESD Protected 2KV HBM

文件：461 Kbytes 页数：4 Pages

YFWDIODE

佑风微

丝印：7002K；Package：SOT-23；N-Channel Enhancement MOSFET

Features Low On-Resistance:RDS(ON) Low GateThresholdVoltage Low InputCapacitance Fast SwitchingSpeed Low Input/OutputLeakage ESD Protected 2KV HBM

文件：512.299 Kbytes 页数：4 Pages

YFWDIODE

佑风微