丝印：72K；Package：SOT23；N-Channel Advanced Power MOSFET

Features • 60V/0.2A, RDS (ON) =2500mΩ(Typ.)@VGS=10V RDS (ON) =2500mΩ(Typ.)@VGS=5V • ESD protected up to 2KV • Low On-Resistance • Super High Dense Cell Design • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Applications • Power Management in Desktop C

文件：411.62 Kbytes 页数：8 Pages

RUICHIPS

锐骏半导体

丝印：72K；Package：SOT-23；SOT-23 Plastic-Encapsulate MOSFETs

N-channel MOSFET FEATURE ● High density cell design for Low RDS（on） ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability ● ESD protected APPLICATION ● Load Switch for Portable Devices ● DC/DC Converter

文件：1.30336 Mbytes 页数：5 Pages

TGS

丝印：72K；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Product Summary ● VDS 60V ● ID 340mA ● RDS(ON)( at VGS=10V)

文件：619.19 Kbytes 页数：6 Pages

YANGJIE

扬杰电子

丝印：72K；Package：SOT-23；Plastic-Encapsulate MOSFET

Features  High density cell design for low RDS(ON).  Voltage controlled small signal switch.  Rugged and reliable.  High saturation current capability.  ESD protected  Load Switch for Portable Devices.  DC/DC Converter.

文件：1.406 Mbytes 页数：3 Pages

GWSEMI

唯圣电子

丝印：72K；Package：SOT-23；Plastic-Encapsulate MOSFETS

MOSFET( N-Channel ) Features: 1. RDS(ON) is low; 2. The control trigger is sensitive; 3. With electrostatic protection; Applications: Used for general switching and phase circuits.

文件：307.7 Kbytes 页数：1 Pages

SHENZHENSLS

三联盛

丝印：72K；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

General Features VDS = 60V,ID = 0.34A RDS(ON)

文件：509.44 Kbytes 页数：5 Pages

RECTRON

丽正国际

丝印：72K；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

General Features VDS = 60V,ID = 0.34A RDS(ON)

文件：509.77 Kbytes 页数：5 Pages

RECTRON

丽正国际

丝印：72K；Package：SOT-323；N-Channel Mosfet

FEATURES Rds(on) ≤ 3Ω @Vgs=10V Rds(on) ≤ 4Ω @Vgs=4.5V

文件：191.87 Kbytes 页数：5 Pages

RECTRON

丽正国际

丝印：72K；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Features •Low on resistance RDS(ON)•Low gate threshold voltage•Low input capacitance•ESD protected up to 2KV•-CAR for automotive and other applications requiring unique site and control change requirements;AEC-Q101 qualified and PPAP capable

文件：419.51 Kbytes 页数：3 Pages

GWSEMI

唯圣电子

丝印：72K；Package：SOT-363；Plastic-Encapsulate MOSFET

Features  High density cell design for low RDS(ON)  Voltage controlled small signal switch  Rugged and reliable  High saturation current capability  ESD protected  Load Switch for Portable Devices.  DC/DC Converter.

文件：1.42099 Mbytes 页数：3 Pages

GWSEMI

唯圣电子