2N7002K

Marking：72K；Package：SOT-23；Plastic-Encapsulate MOSFET

Features HighdensitycelldesignforlowRDS(ON). Voltagecontrolledsmallsignalswitch. Ruggedandreliable. Highsaturationcurrentcapability. ESDprotected LoadSwitchforPortableDevices. DC/DCConverter.

2N7002K

Marking：72K；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

ProductSummary ●VDS60V ●ID340mA ●RDS(ON)(atVGS=10V)

2N7002K

Marking：72K；Package：SOT23；N-Channel Advanced Power MOSFET

Features •60V/0.2A, RDS(ON)=2500mΩ(Typ.)@VGS=10V RDS(ON)=2500mΩ(Typ.)@VGS=5V •ESDprotectedupto2KV •LowOn-Resistance •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeandGreenDevicesAvailable(RoHSCompliant) Applications •PowerManagementinDesktopC

2N7002K

Marking：72K；Package：SOT-23；Plastic-Encapsulate MOSFETS

MOSFET(N-Channel) Features: 1.RDS(ON)islow; 2.Thecontroltriggerissensitive; 3.Withelectrostaticprotection; Applications: Usedforgeneralswitchingandphasecircuits.

2N7002K

Marking：72K；Package：SOT-23；SOT-23 Plastic-Encapsulate MOSFETs

N-channelMOSFET FEATURE ●HighdensitycelldesignforLowRDS（on） ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability ●ESDprotected APPLICATION ●LoadSwitchforPortableDevices ●DC/DCConverter

2N7002KB

Marking：72K；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

GeneralFeatures VDS=60V,ID=0.34A RDS(ON)

2N7002KB

Marking：72K；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

GeneralFeatures VDS=60V,ID=0.34A RDS(ON)

2N7002KBS3

Marking：72K；Package：SOT-323；N-Channel Mosfet

FEATURES Rds(on)≤3Ω@Vgs=10V Rds(on)≤4Ω@Vgs=4.5V

2N7002KC

Marking：72K；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

GeneralFeatures VDS=60V,ID=0.34A RDS(ON)

2N7002K-CAR

Marking：72K；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Features •LowonresistanceRDS(ON)•Lowgatethresholdvoltage•Lowinputcapacitance•ESDprotectedupto2KV•-CARforautomotiveandotherapplicationsrequiringuniquesiteandcontrolchangerequirements;AEC-Q101qualifiedandPPAPcapable