2N7002KDW

Marking：72K；Package：SOT-363；Plastic-Encapsulate MOSFET

Features HighdensitycelldesignforlowRDS(ON) Voltagecontrolledsmallsignalswitch Ruggedandreliable Highsaturationcurrentcapability ESDprotected LoadSwitchforPortableDevices. DC/DCConverter.

2N7002KDW

Marking：72K；Package：SOT-363；Dual N-Channel Enhancement Mode Field Effect Transistor

ProductSummary ●VDS60V ●ID0.34A ●RDS(ON)(atVGS=10V)

2N7002KDW-CAR

Marking：72K；Package：SOT-363；Plastic-Encapsulate MOSFETS

FEATURE HighdensitycelldesignforLowRDS（on） Voltagecontrolledsmallsignalswitch Ruggedandreliable Highsaturationcurrentcapability ESDprotected -CARforautomotiveandotherapplicationsrequiringunique siteandcontrolchangerequirements;AEC-Q101qualifiedand PPAPca

2N7002KM

Marking：72K；Package：SOT-723；N-Channel Enhancement Mode Field Effect Transistor

Features •LowonresistanceRDS(ON) •Lowgatethresholdvoltage •Lowinputcapacitance •ESDprotectedupto2KV

2N7002KQ

Marking：72K；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

ProductSummary ●VDS60V ●ID340mA ●RDS(ON)(atVGS=10V)

2N7002KT

Marking：72K；Package：SOT-523；N-Channel Enhancement Mode Field Effect Transistor

Features •LowonresistanceRDS(ON) •Lowgatethresholdvoltage •Lowinputcapacitance •ESDprotectedupto2KV

2N7002KV

Marking：72K；Package：SOT-563；Plastic-Encapsulate MOSFETS

FEATURE HighdensitycelldesignforLowRDS(on) Voltagecontrolledsmallsignalswitch Ruggedandreliable Highsaturationcurrentcapability ESDprotected APPLICATION LoadSwitchforPortableDevices DC/DCConverter

2N7002KW

Marking：72K；Package：SOT-323；N-Channel Enhancement Mode Field Effect Transistor

ProductSummary ●VDS60V ●ID340mA ●RDS(ON)(atVGS=10V)

2N7002KW-CAR

Marking：72K；Package：SOT-323；N-Channel MOSFET

FEATURE HighdensitycelldesignforLowRDS(on) Voltagecontrolledsmallsignalswitch Ruggedandreliable Highsaturationcurrentcapability ESDprotected -CARforautomotiveandotherapplicationsrequiringuniquesiteand controlchangerequirements;AEC-Q101qualifiedandPPAPcap

2N7002KWQ

Marking：72K；Package：SOD-323；N-Channel Enhancement Mode Field Effect Transistor

ProductSummary ●VDS60V ●ID340mA ●RDS(ON)(atVGS=10V)