型号：BAS70W-05；Package：SOT-323；Surface Mount Schottky Barrier Diode

文件：147.67 Kbytes 页数：3 Pages

银河微电

型号：BAS70WT-05Q；Package：SOT-323；Small Signal Schottky Diode

文件：977.34 Kbytes 页数：4 Pages

扬州扬杰电子

型号：IKQ75N120CH7；Package：PG-TO247-3-PLUS-NN3.7；High speed 1200 V TRENCHSTOP™ IGBT 7 Technology

High speed 1200 V TRENCHSTOP™ IGBT 7 Technology co-packed with full rated current, soft-commutating, ultra-fast recovery and low Qrr emitter controlled 7 Rapid diode Features • VCE = 1200 V • IC = 75 A • Maximum junction temperature Tvjmax = 175°C • Best-in-class high speed IGBT co-packed w

文件：1.60601 Mbytes 页数：17 Pages

英飞凌

型号：IKW75N120CH7；Package：PG-TO247-3-STD-NN2.5；High speed 1200 V TRENCHSTOP™ IGBT 7 Technology co-packed with full rated current, soft-commutating, ultra-fast recovery and low Qrr emitter controlled 7 Rapid diode

Features • VCE = 1200 V • IC = 75 A • Maximum junction temperature Tvjmax = 175°C • Best-in-class high speed IGBT co-packed with full rated current, low Qrr and soft-commutating high speed diode • Low saturation voltage VCEsat = 1.7 V at Tvj = 25°C • Optimized for high efficiency in high sp

文件：1.50461 Mbytes 页数：17 Pages

英飞凌

型号：IKW75N60T；Package：PG-TO-247-3-21；Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode ● Very low VCE(sat) 1.5V (typ.) ● Maximum Junction Temperature 175°C ● Short circuit withstand time 5s ● Positive temperature coefficient in VCE(sat) ● very tigh

文件：411.41 Kbytes 页数：13 Pages

英飞凌

型号：IKW75N65RH5；Package：PG-TO247-3；CoolSiC™ Hybrid Discrete - TRENCHSTOP™ 5 H5 IGBT co-packed with half-rated 6th generation CoolSiC™ diode

Features • VCE = 650 V • IC = 75 A • Ultra-low switching losses due to the combination of TRENCHSTOPTM 5 and CoolSiCTM technology • Benchmark efficiency in hard switching topologies • Plug-and-play replacement of pure silicon devices • Maximum junction temperature Tvjmax = 175°C • Qualifie

文件：1.42393 Mbytes 页数：16 Pages

英飞凌

型号：IKWH75N65EH7；Package：PG-TO247-3-STD-NN4.8；High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology copacked with soft, fast recovery Emitter Controlled 7 diode

Features • VCE = 650 V • IC = 75 A • Low switching losses • Very low collector-emitter saturation voltage VCEsat • Very soft, fast recovery antiparallel diode • Smooth switching behavior • Humidity robustness • Optimized for hard switching, two- and three-level topologies • Complete produ

文件：2.048639 Mbytes 页数：17 Pages

英飞凌

型号：IKY75N120CH7；Package：PG-TO247-4-PLUS-NN5.1；High speed 1200 V TRENCHSTOP™ IGBT 7 Technology

High speed 1200 V TRENCHSTOP™ IGBT 7 Technology co-packed with full rated current, soft-commutating, ultra-fast recovery and low Qrr emitter controlled 7 Rapid diode Features • VCE = 1200 V • IC = 75 A • Maximum junction temperature Tvjmax = 175°C • Best-in-class high speed IGBT co-packed w

文件：1.69225 Mbytes 页数：17 Pages

英飞凌

型号：IKZA75N120CH7；Package：PG-TO247-4-STD-NT3.7；High speed 1200 V TRENCHSTOP™ IGBT 7 Technology

High speed 1200 V TRENCHSTOP™ IGBT 7 Technology co-packed with full rated current, soft-commutating, ultra-fast recovery and low Qrr emitter controlled 7 Rapid diode Features • VCE = 1200 V • IC = 75 A • Maximum junction temperature Tvjmax = 175°C • Best-in-class high speed IGBT co-packed w

文件：1.72565 Mbytes 页数：17 Pages

英飞凌

型号：IKZA75N65EH7；Package：PG-TO247-4-STD-NT3.7；High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology copacked with soft, fast recovery Emitter Controlled 7 diode

Features • VCE = 650 V • IC = 75 A • Low switching losses • Very low collector-emitter saturation voltage VCEsat • Very soft, fast recovery antiparallel diode • Smooth switching behavior • Humidity robustness • Optimized for hard switching, two- and three-level topologies • Complete produ

文件：2.16448 Mbytes 页数：17 Pages

英飞凌