BAS70W-05

Marking：K75；Package：SOT-323；Surface Mount Schottky Barrier Diode

BAS70WT-05Q

Marking：K75；Package：SOT-323；Small Signal Schottky Diode

IKQ75N120CH7

Marking：K75MCH7；Package：PG-TO247-3-PLUS-NN3.7；High speed 1200 V TRENCHSTOP™ IGBT 7 Technology

Highspeed1200VTRENCHSTOP™IGBT7Technologyco-packedwithfullratedcurrent,soft-commutating,ultra-fastrecoveryandlowQrremittercontrolled7Rapiddiode Features •VCE=1200V •IC=75A •MaximumjunctiontemperatureTvjmax=175°C •Best-in-classhighspeedIGBTco-packedw

IKW75N120CH7

Marking：K75MCH7；Package：PG-TO247-3-STD-NN2.5；High speed 1200 V TRENCHSTOP™ IGBT 7 Technology co-packed with full rated current, soft-commutating, ultra-fast recovery and low Qrr emitter controlled 7 Rapid diode

Features •VCE=1200V •IC=75A •MaximumjunctiontemperatureTvjmax=175°C •Best-in-classhighspeedIGBTco-packedwithfullratedcurrent,lowQrrandsoft-commutating highspeeddiode •LowsaturationvoltageVCEsat=1.7VatTvj=25°C •Optimizedforhighefficiencyinhighsp

IKW75N60T

Marking：K75T60；Package：PG-TO-247-3-21；Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

LowLossDuoPack:IGBTinTRENCHSTOP™andFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmitterControlledHEdiode ●VerylowVCE(sat)1.5V(typ.) ●MaximumJunctionTemperature175°C ●Shortcircuitwithstandtime5s ●PositivetemperaturecoefficientinVCE(sat) ●verytigh

IKW75N65RH5

Marking：K75ERH5；Package：PG-TO247-3；CoolSiC™ Hybrid Discrete - TRENCHSTOP™ 5 H5 IGBT co-packed with half-rated 6th generation CoolSiC™ diode

Features •VCE=650V •IC=75A •Ultra-lowswitchinglossesduetothecombinationofTRENCHSTOPTM5andCoolSiCTM technology •Benchmarkefficiencyinhardswitchingtopologies •Plug-and-playreplacementofpuresilicondevices •MaximumjunctiontemperatureTvjmax=175°C •Qualifie

IKWH75N65EH7

Marking：K75EEH7；Package：PG-TO247-3-STD-NN4.8；High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology copacked with soft, fast recovery Emitter Controlled 7 diode

Features •VCE=650V •IC=75A •Lowswitchinglosses •Verylowcollector-emittersaturationvoltageVCEsat •Verysoft,fastrecoveryantiparalleldiode •Smoothswitchingbehavior •Humidityrobustness •Optimizedforhardswitching,two-andthree-leveltopologies •Completeprodu

IKY75N120CH7

Marking：K75MCH7；Package：PG-TO247-4-PLUS-NN5.1；High speed 1200 V TRENCHSTOP™ IGBT 7 Technology

Highspeed1200VTRENCHSTOP™IGBT7Technologyco-packedwithfullratedcurrent,soft-commutating,ultra-fastrecoveryandlowQrremittercontrolled7Rapiddiode Features •VCE=1200V •IC=75A •MaximumjunctiontemperatureTvjmax=175°C •Best-in-classhighspeedIGBTco-packedw

IKZA75N120CH7

Marking：K75MCH7；Package：PG-TO247-4-STD-NT3.7；High speed 1200 V TRENCHSTOP™ IGBT 7 Technology

Highspeed1200VTRENCHSTOP™IGBT7Technologyco-packedwithfullratedcurrent,soft-commutating,ultra-fastrecoveryandlowQrremittercontrolled7Rapiddiode Features •VCE=1200V •IC=75A •MaximumjunctiontemperatureTvjmax=175°C •Best-in-classhighspeedIGBTco-packedw

IKZA75N65EH7

Marking：K75EEH7；Package：PG-TO247-4-STD-NT3.7；High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology copacked with soft, fast recovery Emitter Controlled 7 diode

Features •VCE=650V •IC=75A •Lowswitchinglosses •Verylowcollector-emittersaturationvoltageVCEsat •Verysoft,fastrecoveryantiparalleldiode •Smoothswitchingbehavior •Humidityrobustness •Optimizedforhardswitching,two-andthree-leveltopologies •Completeprodu