Features

• VCE = 650 V

• IC = 75 A

• Ultra-low switching losses due to the combination of TRENCHSTOPTM 5 and CoolSiCTM

technology

• Benchmark efficiency in hard switching topologies

• Plug-and-play replacement of pure silicon devices

• Maximum junction temperature Tvjmax = 175°C

• Qualified according to JEDEC for target applications

• Pb-free lead plating; RoHS compliant

• Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/

Potential applications

• Industrial SMPS

• Industrial UPS

• Solar string inverter

• Energy storage

• Charger

IKW75N65RH5属于分立半导体产品 > 晶体管 - UGBT、MOSFET - 单。英飞凌科技公司制造生产的IKW75N65RH5晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。