丝印：K75ERH5；Package：PG-TO247-3；CoolSiC™ Hybrid Discrete - TRENCHSTOP™ 5 H5 IGBT co-packed with half-rated 6th generation CoolSiC™ diode

Features • VCE = 650 V • IC = 75 A • Ultra-low switching losses due to the combination of TRENCHSTOPTM 5 and CoolSiCTM technology • Benchmark efficiency in hard switching topologies • Plug-and-play replacement of pure silicon devices • Maximum junction temperature Tvjmax = 175°C • Qualifie

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丝印：K75ERH5；Package：PG-TO247-3；TRENCHSTOPTM 5 H5 IGBT co-packed with half-rated 6th generation CoolSiCTM Schottky barrier diode

文件：1.57237 Mbytes 页数：15 Pages

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丝印：K75ERH5；Package：PG-TO247-4-3；TRENCHSTOPTM 5 H5 IGBT co-packed with half-rated 6th generation CoolSiCTM Schottky barrier diode

文件：1.51817 Mbytes 页数：15 Pages

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