K75

型号：BAS70W-05；Package：SOT-323；Surface Mount Schottky Barrier Diode

K75

型号：BAS70WT-05Q；Package：SOT-323；Small Signal Schottky Diode

K75MCH7

型号：IKQ75N120CH7；Package：PG-TO247-3-PLUS-NN3.7；High speed 1200 V TRENCHSTOP™ IGBT 7 Technology

Highspeed1200VTRENCHSTOP™IGBT7Technologyco-packedwithfullratedcurrent,soft-commutating,ultra-fastrecoveryandlowQrremittercontrolled7Rapiddiode Features •VCE=1200V •IC=75A •MaximumjunctiontemperatureTvjmax=175°C •Best-in-classhighspeedIGBTco-packedw

K75MCH7

型号：IKW75N120CH7；Package：PG-TO247-3-STD-NN2.5；High speed 1200 V TRENCHSTOP™ IGBT 7 Technology co-packed with full rated current, soft-commutating, ultra-fast recovery and low Qrr emitter controlled 7 Rapid diode

Features •VCE=1200V •IC=75A •MaximumjunctiontemperatureTvjmax=175°C •Best-in-classhighspeedIGBTco-packedwithfullratedcurrent,lowQrrandsoft-commutating highspeeddiode •LowsaturationvoltageVCEsat=1.7VatTvj=25°C •Optimizedforhighefficiencyinhighsp

K75T60

型号：IKW75N60T；Package：PG-TO-247-3-21；Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

LowLossDuoPack:IGBTinTRENCHSTOP™andFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmitterControlledHEdiode ●VerylowVCE(sat)1.5V(typ.) ●MaximumJunctionTemperature175°C ●Shortcircuitwithstandtime5s ●PositivetemperaturecoefficientinVCE(sat) ●verytigh

K75ERH5

型号：IKW75N65RH5；Package：PG-TO247-3；CoolSiC™ Hybrid Discrete - TRENCHSTOP™ 5 H5 IGBT co-packed with half-rated 6th generation CoolSiC™ diode

Features •VCE=650V •IC=75A •Ultra-lowswitchinglossesduetothecombinationofTRENCHSTOPTM5andCoolSiCTM technology •Benchmarkefficiencyinhardswitchingtopologies •Plug-and-playreplacementofpuresilicondevices •MaximumjunctiontemperatureTvjmax=175°C •Qualifie

K75EEH7

型号：IKWH75N65EH7；Package：PG-TO247-3-STD-NN4.8；High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology copacked with soft, fast recovery Emitter Controlled 7 diode

Features •VCE=650V •IC=75A •Lowswitchinglosses •Verylowcollector-emittersaturationvoltageVCEsat •Verysoft,fastrecoveryantiparalleldiode •Smoothswitchingbehavior •Humidityrobustness •Optimizedforhardswitching,two-andthree-leveltopologies •Completeprodu

K75MCH7

型号：IKY75N120CH7；Package：PG-TO247-4-PLUS-NN5.1；High speed 1200 V TRENCHSTOP™ IGBT 7 Technology

Highspeed1200VTRENCHSTOP™IGBT7Technologyco-packedwithfullratedcurrent,soft-commutating,ultra-fastrecoveryandlowQrremittercontrolled7Rapiddiode Features •VCE=1200V •IC=75A •MaximumjunctiontemperatureTvjmax=175°C •Best-in-classhighspeedIGBTco-packedw

K75MCH7

型号：IKZA75N120CH7；Package：PG-TO247-4-STD-NT3.7；High speed 1200 V TRENCHSTOP™ IGBT 7 Technology

Highspeed1200VTRENCHSTOP™IGBT7Technologyco-packedwithfullratedcurrent,soft-commutating,ultra-fastrecoveryandlowQrremittercontrolled7Rapiddiode Features •VCE=1200V •IC=75A •MaximumjunctiontemperatureTvjmax=175°C •Best-in-classhighspeedIGBTco-packedw

K75EEH7

型号：IKZA75N65EH7；Package：PG-TO247-4-STD-NT3.7；High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology copacked with soft, fast recovery Emitter Controlled 7 diode

Features •VCE=650V •IC=75A •Lowswitchinglosses •Verylowcollector-emittersaturationvoltageVCEsat •Verysoft,fastrecoveryantiparalleldiode •Smoothswitchingbehavior •Humidityrobustness •Optimizedforhardswitching,two-andthree-leveltopologies •Completeprodu