2N7002T/BKN技术资料参数原装现货威世科技-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业
2N7002	文件：91.04 Kbytes Page：6 Pages	N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Description •N-channelenhancementmodefieldeffecttransistor,designedforhighspeedpulsedamplifieranddriverapplications,whichismanufactoredbytheN-ChannelDMOSprocess. Features •HighdensitycelldesignforlowRDS(ON). •Voltagecontrolledsmallsignalswitching. •Ruggeda	PANJITPANJIT International Inc. 强茂強茂股份有限公司
2N7002	文件：30.9 Kbytes Page：4 Pages	N-ChannelEnhancement-ModeVerticalDMOSFETs GeneralDescription TheSupertex2N7002isanenhancement-mode(normallyoff)transistorthatutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors,andtheh	SUTEX Supertex, Inc
2N7002	文件：25.02 Kbytes Page：1 Pages	N-CHANNELENHANCEMENTMODEVERTICALDMOSFET FEATURES *60VoltVCEO	Zetex Zetex Semiconductors
2N7002	文件：51.23 Kbytes Page：5 Pages	N-Channel60-V(D-S)MOSFET FEATURES ●LowOn-Resistance:2.5Ω ●LowThreshold:2.1V ●LowInputCapacitance:22pF ●FastSwitchingSpeed:7ns ●LowInputandOutputLeakage BENEFITS ●LowOffsetVoltage ●Low-VoltageOperation ●EasilyDrivenWithoutBuffer ●High-SpeedCircuits ●LowErrorVoltage APPLICATI	VishayVishay Siliconix 威世科技
2N7002	文件：538.2 Kbytes Page：14 Pages	N-ChannelEnhancementModeFieldEffectTransistor Description TheseN-channelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileprovidingrugged,reliable,andfastswitchingperformance.Theycanbeused	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
2N7002	文件：80.02 Kbytes Page：2 Pages	N-CHANNELENHANCEMENT-MODEMOSFET DESCRIPTION: TheCENTRALSEMICONDUCTOR2N7002typeisanN-Channelenhancement-modeMOSFETmanufacturedbytheN-ChannelDMOSProcess,designedforhighspeedpulsedamplifieranddriverapplications.	CentralCentral Semiconductor Corp 美国中央半导体
2N7002	文件：55.51 Kbytes Page：3 Pages	N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Description ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitanc	DIODESDiodes Incorporated 达尔科技
2N7002	文件：474.45 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司
2N7002	文件：24.81 Kbytes Page：2 Pages	N-ChannelEnhancement-ModeMOSTransistor DESCRIPTION Calogic’s2N7002devicetypeisaverticalDMOSFETtransistorhousedinasurfacemountSOT-23formicro-assemblyapplications.Thedeviceisanexcellentchoiceforswitchingapplicationswherebreakdown(BV)andlowon-resistanceareimportant.	Calogic Calogic
2N7002	文件：243.64 Kbytes Page：5 Pages	DMOSTransistors(N-Channel)	GE GE Industrial Company
2N7002	文件：162.29 Kbytes Page：4 Pages	AdvancedSmallSignalMOSFET BVDSS=60V RDS(on)=5.0Ω ID=200mA FEATURES ●LowerRDS(on) ●ImprovedInductiveRuggedness ●FastSwitchingTimes ●LowerInputCapacitance ●ExtendedSafeOperatingArea ●ImprovedHighTemperatureReliability	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
2N7002	文件：468.13 Kbytes Page：10 Pages	MinisizeofDiscretesemiconductorelements	ETC1List of Unclassifed Manufacturers 未分类制造商
2N7002	文件：473.01 Kbytes Page：4 Pages	SmallSignalMOSFETN-Channel Features: LowOn-Resistance:3 LowInputCapacitance:25PF LowOutputCapacitance:6PF LowThreshole:1.5V(TYE) *FastSwitchingSpeed:7.5ns	WEITRONWEITRON 威堂電子科技
2N7002	文件：172.91 Kbytes Page：2 Pages	NChannelSmallSignalMOSFET ●DRIVESSWITCHS,RELAYS,SOLENOIDS,LAMPS,DISPLAYS,ETC. ●LOWOFFSETVOLTAGE ●LOWVOLTAGEOPERATION ●EASILYDRIVENWITHOUTBUFFER	STANSONStanson Technology Stanson 科技
2N7002	文件：220.09 Kbytes Page：10 Pages	N-ChannelEnhancementModeFieldEffectTransistor	NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司
2N7002	文件：699.21 Kbytes Page：6 Pages	LogicN-ChannelMOSFET GeneralDescription ThisPowerMOSFETisproducedusingplanarDMOStechnology.AndthisPowerMOSFETiswellsuitedforBatteryswitch,Loadswitch,Motorcontrollerandothersmallsignalswitches. Features ■RDS(on)(Max7.5Ω)@VGS=10V RDS(on)(Max7.5Ω)@VGS=4.5V ■GateCharge(Typical	semiWell semiWell
2N7002	文件：148.68 Kbytes Page：6 Pages	N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR DESCRIPTION TheUTC2N7002usesadvancedtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES HighDensityCellDesignforLowRDS(ON). VoltageControlledSmallSigna	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司
2N7002	文件：116.48 Kbytes Page：5 Pages	N-ChannelSmallSignalMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
2N7002	文件：383.82 Kbytes Page：14 Pages	N-channel60V-1.8ohm-0.35A-SOT23-3L/TO-92STripFETPowerMOSFET Description ThisPowerMOSFETisthesecondgenerationofSTMicroelectronicsunique“singlefeaturesize”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemark	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团
2N7002	文件：88 Kbytes Page：3 Pages	N-CHANNELTRANSISTOR Description TheMTN7002N2isaN-channelenhancement-modeMOStransistor. Drain-SourseVoltageBVDSS60V Drain-GateVoltage(RGS=1M:)BVDSS60V Gate-SourceVoltageVGS+/-40V ContinuousDrainCurrent(Ta=25℃)ID2001mA ContinuousDrainCurrent(Ta=100℃)ID1151mA PulsedDrainCurre	COMCHIPComchip Technology 典琦典琦科技股份有限公司

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市勤思达科技有限公司	2N7002T/R	PANJIT	23+	SOT-23	8000	全新原装现货,欢迎来电咨询	询价
深圳市莱克讯科技有限公司	2N7002T/R	PANJIT	2017+	SOT23	32256	深圳香港代理原装现货库存(美国-日本-台湾)可开正规增	询价
深圳好佳好科技有限公司	2N7002T/R	PHILIPS	1408+	3/SOT23	14790	绝对原装进口现货可开增值税发票	询价
深圳市豪迈兴电子有限公司	2N7002T/R	NXP	2339+	N/A	8858	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
深圳市弘为电子有限公司	2N7002T/R	PANJIT	16+	TSSOP16	1399	原装现货假一罚十	询价
深圳市卓越微芯电子有限公司	2N7002T/R	PANJIT	2020+	SOT23	6000	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市英科美电子有限公司	2N7002T/R	Philips	2021+	N/A	6800	只有原装正品	询价
深圳市振宏微科技有限公司	2N7002T/R	PANJIT	23+	NA	33486	专做原装正品,假一罚百!	询价
深圳市华斯顿科技有限公司	2N7002T/R	PANJIT	22+23+	SOT-23	31743	绝对原装正品全新进口深圳现货	询价
深圳市百视威讯电子科技有限公司	2N7002T/R		23+	N/A	36200	正品授权货源可靠	询价

更多2N7002T/BKN供应商更新时间2024-4-16 16:00:00

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