丝印：703*；Package：SOT-23；Small Signal MOSFET 60 V, 310 mA, Single, N?묬hannel, SOT??3

Features • Low RDS(on) • Small Footprint Surface Mount Package • Trench Technology • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoH

文件：104.79 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Small Signal MOSFET Single N?묬hannel, 60 V, 310 mA, 2.5 Ohm

Features • Low RDS(on) • Small Footprint Surface Mount Package • Trench Technology • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Comp

文件：205.12 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：-2E；Package：SOT-23；N-channel TrenchMOS FET

General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. Features ■ Logic level threshold compatible ■ Surface-mounted package ■ Very fast switching ■ TrenchMOS technology Applications ■ Logic level translator ■ High-sp

文件：81.36 Kbytes 页数：11 Pages

PHI

PHI

丝印：7E**；Package：SOT-23；N-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low On-Resistance: 3  • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 7.5 ns • Low Input and Output Leakage • Compliant to RoHS Directive 2002/95/EC BENEFITS • Low Offset Voltage • Low-Vo

文件：85.19 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capaci

文件：419.09 Kbytes 页数：4 Pages

DIODES

美台半导体

Super high dense cell design for low RDS (ON).

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● SOT-23 package.

文件：388 Kbytes 页数：5 Pages

FCI

富加宜

N-Channel Enhanceent Mode Field Effect Transistor

Features ● Low On-Resistance: RDS(ON) ● Low Gate Threshold Voltage ● Low Input Capacitance ● Fast Switching Speed ● Low Input/Output Leakage

文件：45.18 Kbytes 页数：1 Pages

KEXIN

科信电子

N-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • TrenchFET® Power MOSFET • 1200V ESD Protection • Compliant to RoHS Directive 2002/95/EC BENEFITS • Low

文件：1.00502 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

N-CHANNEL ENHANCEMENT-MODE MOSFET

Features • Low On-Resistance: RDS(ON) • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage

文件：152.76 Kbytes 页数：3 Pages

ZSELEC

淄博圣诺

N-CHANNEL ENHANCEMENT

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR • Low On-Resistance • Fast Switching Speed • Low-voltage drive • Easily designed drive circuits • Pb-Free Package is available. • Can protect against static electricity 1KV when the product is in use. • AEC-Q101 Pass

文件：999.07 Kbytes 页数：4 Pages

YEASHIN

亚昕科技