2N7002E分立半导体产品的晶体管-FETMOSFET-单个规格书PDF中文资料

General description

N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

特性 Features

■ Logic level threshold compatible

■ Surface-mounted package

■ Very fast switching

■ TrenchMOS technology

Applications

■ Logic level translator

■ High-speed line driver

Quick reference data

■ VDS ≤ 60 V

■ RDSon ≤ 3 Ω

■ ID ≤ 385 mA

■ Ptot ≤ 0.83 W