BC847BPNH

Marking：7E；Package：TSSOP6；45 V, 100 mA NPN/PNP general-purpose double transistor

Featuresandbenefits •Lowcollectorcapacitance •Lowcollector-emittersaturationvoltage •Closelymatchedcurrentgain •Reducesnumberofcomponentsandboardspace •Nomutualinterferencebetweenthetransistors •High-temperatureapplicationsupto175°C

BC847BPNH-Q

Marking：7E；Package：TSSOP6；45 V, 100 mA NPN/PNP general-purpose double transistor

Featuresandbenefits •Lowcollectorcapacitance •Lowcollector-emittersaturationvoltage •Closelymatchedcurrentgain •Reducesnumberofcomponentsandboardspace •Nomutualinterferencebetweenthetransistors •High-temperatureapplicationsupto175°C •QualifiedaccordingtoA

BZX38450-C6V2

Marking：7E；Package：SOD323；Low-current voltage regulator diodes

1.Generaldescription Low-currentvoltageregulatordiodesinasmallSOD323(SC-76)Surface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits •Totalpowerdissipation:≤300mW •Toleranceseries:approximately±5 •Workingvoltagerange:nominal1.8Vto10V •Specifie

BZX38450-C6V2-Q

Marking：7E；Package：SOD323；Low-current voltage regulator diodes

1.Generaldescription Low-currentvoltageregulatordiodesinasmallSOD323(SC-76)Surface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits •Totalpowerdissipation:≤300mW •Toleranceseries:approximately±5 •Workingvoltagerange:nominal1.8Vto10V •Specifie

BZX8850S-C8V2

Marking：7E；Package：SOD882BD；Low-current voltage regulator diodes

1.Generaldescription Low-currentvoltageregulatordiodesinanultrasmallSOD882BD(DFN1006BD-2)leadless Surface-MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits •Totalpowerdissipation:≤365mW •Toleranceseries:approximately±5 •Workin

BZX8850S-C8V2-Q

Marking：7E；Package：DFN1006BD-2；Low-current voltage regulator diodes

1.Generaldescription Low-currentvoltageregulatordiodesinanultrasmallSOD882BD(DFN1006BD-2)leadless Surface-MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits •Totalpowerdissipation:≤365mW •Toleranceseries:approximately±5 •Workin

MMBTA92

Marking：7E；Package：SOT23；PNP high-voltage transistor

FEATURES ·Lowcurrent(max.100mA) ·Highvoltage(max.300V). APPLICATIONS ·Telephony ·Professionalcommunicationequipment. DESCRIPTION PNPhigh-voltagetransistorinaSOT23plasticpackage. NPNcomplement:MMBTA42.

PESD24VS2UAT

Marking：7E；Package：SOT23；Double ESD protection diodes in SOT23 package

FEATURES ·UnidirectionalESDprotectionofuptotwolines ·Common-cathodeconfiguration ·Max.peakpulsepower:Ppp=330Wattp=8/20ms ·Lowclampingvoltage:V(CL)R=20VatIpp=18A ·Ultra-lowreverseleakagecurrent:IRM30kV ·IEC61000-4-2;lev

PESD24VS2UAT

Marking：7E；Package：SOT23；Double ESD protection diode in SOT23 package

1.Generaldescription UnidirectionaldoubleESDprotectiondiodeincommoncathodeconfigurationinasmallSOT23 Surface-MountedDevice(SMD)plasticpackage,designedtoprotectuptotwodatalinesagainst damagefromElectroStaticDischarge(ESD)andothertransients. 2.Featuresandbene

UPD120N18T1B

Marking：7E；Package：SC-62；THREE-TERMINAL LOW-DROPOUT POSITIVE-VOLTAGE REGULATOR (OUTPUT CURRENT: 0.3 A)

Features •Outputcurrent:0.3A •On-chipovercurrentprotectioncircuit •On-chipthermalprotectioncircuit •Smallcircuitoperationcurrent:60μATYP.