2SC1623

AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

FEATURES •HighDCCurrentGain:hFE=200TYP. (VCE=6.0V,IC=1.0mA) •HighVoltage:VCEO=50V

2SC1623

Marking：L5；Package：SOT-23；NPN General Purpose Transistors

Lead(Pb)-Free

2SC1623

NPN Silicon Epitaxial Transistors

Features •HalogenFree.“Green”Device(Note1) •MoistureSensitivityLevel1 •EpoxyMeetsUL94V-0FlammabilityRating •LeadFreeFinish/RoHSCompliant(PSuffixDesignatesRoHS Compliant.SeeOrderingInformation)

2SC1623

Marking：L4；Package：SOT-23；Silicon Epitaxial Planar Transistor

FEATURES ●HighDCcurrentgain:hFE=200TYP (VCE=6.0V,IC=1.0mA) ●HighVoltage:VCEO=50V APPLICATIONS ●NPNSiliconEpitaxialPlanarTransistor ●Audiofrequencygeneralpurposeamplifier.

2SC1623

Plastic-Encapsulate Transistors

TRANSISTOR(NPN) FEATURES Powerdissipation PCM:200mW(Tamb=25℃) Collectorcurrent ICM:100mA Collector-basevoltage V(BR)CBO:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

2SC1623

NPN Silicon Transistor

Features ●HighDCCurrentGain: hFE=200TYP. VCE=6.0V,IC=1.0mA ●HighVoltage: VCEO=50V

2SC1623

NPN Epitaxial Planar Transistor

DESCRIPTION The2SC1623isdesignedforusedriverstageofAFamplifierandgeneralpurposeapplication.

2SC1623

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designedforaudiofrequencyamplifierapplications.

2SC1623

AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON TRANSISTOR MINI MOLD

DESCRIPTION TheUTC2SC1623isaNPNsilicontransistorusingUTC’sadvancedtechnologytoprovidecustomerswithhighDCcurrentgainandhighbreakdownvoltage.TheUTC2SC1623isusuallyusedinaudiofrequencygeneralpurposeamplifier. FEATURES *HighbreakdownVoltage *HighDCCurrentGai

2SC1623

Marking：L4/L5/L6/L7；Package：SOT-23；Silicon Epitaxial Planar Transistor

FEATURES ●HighDCcurrentgain:hFE=200TYP (VCE=6.0V,IC=1.0mA). ●HighVoltage:VCEO=50V. APPLICATIONS ●NPNSiliconEpitaxialPlanarTransistor. ●Audiofrequencygeneralpurposeamplifier.