TRANSISTOR(PNP)

FEATURES High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596.

文件：446.02 Kbytes 页数：2 Pages

HTSEMI

金誉半导体

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) ● Complimentary to 2SD596.

文件：2.35306 Mbytes 页数：4 Pages

JIANGSU

长电科技

PNP Silicon Epitaxial Transistor

■ Features ● High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) ● Complimentary to 2SD596.

文件：37.59 Kbytes 页数：1 Pages

KEXIN

科信电子

AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD

DESCRIPTION The 2SB624 is designed for use in small type equipments especially recommended for hybrid integrated circuit and other applications.

文件：256.85 Kbytes 页数：4 Pages

NEC

瑞萨

PNP Epitaxial Planar Transistors

文件：214.93 Kbytes 页数：4 Pages

WEITRON

丝印：BV*；Package：SOT-23；Silicon Epitaxial Planar Transistor

FEATURES High DC current gain.hFE: 200TYP (VCE=-1.0V,IC=-100mA) Complimentary to the 2SD596. APPLICATIONS Audio frequency amplifier. Switching appilication.

文件：295.75 Kbytes 页数：4 Pages

BILIN

银河微电

PNP Silicon Plastic Encapsulated Transistor

FEATURES  High DC Current Gain. hFE：200 (Typ.) (VCE= -1V, IC= -100mA)  Complimentary to 2SD596

文件：427.83 Kbytes 页数：2 Pages

SECOS

喜可士

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) ● Complimentary to 2SD596.

文件：1.67315 Mbytes 页数：1 Pages

DGNJDZ

南晶电子

TRANSISTOR (PNP)

FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: -0.7 A Collector-base voltage V(BR)CBO: -30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：149.57 Kbytes 页数：1 Pages

WINNERJOIN

永而佳

Silicon PNP transistor in a SOT-23 Plastic Package

Descriptions Silicon PNP transistor in a SOT-23 Plastic Package. Features High hFE, complementary pair with 2SD596. Applications Audio frequency amplifier application.

文件：911.8 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子