丝印：BV；Package：SOT-23；Micro package High dc current gain

FEATURES ● Micro package. ● High dc current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA)

文件：635.46 Kbytes 页数：1 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

PNP Transistors

■ Features ● High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) ● Complimentary to 2SD596.

文件：370.84 Kbytes 页数：2 Pages

YFWDIODE

佑风微

Plastic-Encapsulate Transistors

Applications: Used in power amplifier circuit, complementary to 2SD596.

文件：499.72 Kbytes 页数：2 Pages

SHENZHENSLS

三联盛

Plastic-Encapsulated Transistors

TRANSISTOR (PNP) FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: -0.7 A Collector-base voltage V(BR)CBO: -30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：111.16 Kbytes 页数：1 Pages

TEL

东电电子

丝印：BV1/BV2/BV3/BV4/BV5；Package：SOT-23；Audio frequency amplifier.

文件：1.16292 Mbytes 页数：2 Pages

LUGUANG

鲁光电子

丝印：BV*；Package：SOT-23；Silicon Epitaxial Planar Transistor

文件：261.579 Kbytes 页数：4 Pages

BILIN

银河微电

TRANSISTOR (PNP)

MSV

萌盛微

25V,0.7A,General Purpose PNP Bipolar Transistor

Galaxy

银河微电

晶体管

JSCJ

长晶科技

SILICON TRANSISTOR

AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Complementary to NEC 2SD596A NPN Transistor. • High DC Current Gain: hFE = 200 TYP. (VCE = −1.0 V, IC = −100 mA) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage VCBO −30 V Collector to Em

文件：381.36 Kbytes 页数：6 Pages

RENESAS

瑞萨