Medium Power Transistor (-50V, -1A)

Features 1) Low saturation voltage, typically VCE(sat)=−0.15V at IC/IB=−500mA/−50mA 2) PC=2W (on 40×40×0.7mm ceramic board) 3) Complements the 2SC5053

文件：66.32 Kbytes 页数：3 Pages

ROHM

罗姆

isc Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage -V(BR)CEO= -50V(Min) ·Collector-Emitter Saturation Voltage -VCE(sat)= -0.4V(Max) @IC=-500mA

文件：278.63 Kbytes 页数：3 Pages

ISC

无锡固电

Medium power transistor

Features ● Low saturation voltage, typically VCE(sat) = -0.15V at IC / IB = -500mA / -50mA ● PC=2W (on 40X40X0.7mm ceramic board)

文件：50.2 Kbytes 页数：1 Pages

KEXIN

科信电子

Driver Transistor

•启动用表面安装型三极管;

ROHM

罗姆

PNP Silicon Epitaxial Planar Transistor

文件：253.78 Kbytes 页数：3 Pages

SEMTECH_ELEC

先之科半导体

功率三极管

ST

意法半导体

PNP小信号三极管

CBI

创基电子

Package：TO-243AA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 50V 1A MPT3

Rohm Semiconductor